PNP Transistor Slkor MMST3906 with 40V Collector Emitter Voltage and 0.2A Collector Current in SOT323

Key Attributes
Model Number: MMST3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Number:
1 PNP
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMST3906
Package:
SOT-323
Product Description

Product Overview

The MMST3906 is a PNP transistor designed for general-purpose applications. It features a collector current capability of -0.2A and a collector-emitter voltage of -40V. This transistor is supplied in a compact SOT-323 package, making it suitable for space-constrained designs.

Product Attributes

  • Type: PNP Transistor
  • Model: MMST3906
  • Package: SOT-323
  • Marking: K5N
  • Manufacturer: slkormicro.com
  • Revision: 1
  • Date: October 18, 2016

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage VCBO Ic= -100 A IE= 0 -40 V
Collector- emitter breakdown voltage VCEO Ic= -1 mA IB= 0 -40 V
Emitter - base breakdown voltage VEBO IE= -100A IC= 0 -5 V
Collector-base cut-off current ICBO VCB= -40 V , IE= 0 -100 nA
Base cut-off current IBL VCE= -30 V , VEB(off)= -3V -50 nA
Collector- emitter cut-off current ICEX VCE= -30 V ,VBE(off)= -3V -50 nA
Emitter cut-off current IEBO VEB= -5V , IC=0 -100 nA
Collector-emitter saturation voltage VCE(sat) IC=-10 mA, IB=-1 mA -0.2 -0.85 V
IC=-50 mA, IB=-5 mA -0.3 -0.95 V
DC current gain hFE VCE= -1V, IC= -100 uA 60
VCE= -1V, IC= -1 mA 80
VCE= -1V, IC= -10 mA 100 300
Delay time td 35 nS
Rise time tr 35 nS
Storage time ts 225 nS
Fall time tf 75 nS
Collector input capacitance Cib VEB= -0.5V, IE= 0,f=1MHz 10 pF
Collector output capacitance Cob VCB= -5V, IE= 0,f=1MHz 4.5 pF
Transition frequency fT VCE= -20V, IC= -10mA,f=100MHz 250 MHz
Collector Current Capability IC -200 mA
Collector Emitter Voltage VCEO -40 V
Collector Power Dissipation PC Ta = 25 200 mW
Thermal Resistance Junction To Ambient RJA 625 /W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 150
Dimension Unit A B A1 bp c D E e e1 HE Lp Q v w
Dimensions (mm) 1.1 0.8 0.4 0.3 0.25 2.2 1.8 1.3 0.2 2.2 1.35 1.15 0.65 0.45
Tolerance 0.1 0.1 0.10 0.13 0.2 0.2 0.23 0.15

2309281726_Slkor-MMST3906_C18208592.pdf

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