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quality Electronic Circuits Switching Amplifier Transistor Slkor MMBT3904W NPN Silicon Epitaxial Planar Type factory
quality Electronic Circuits Switching Amplifier Transistor Slkor MMBT3904W NPN Silicon Epitaxial Planar Type factory

Electronic Circuits Switching Amplifier Transistor Slkor MMBT3904W NPN Silicon Epitaxial Planar Type

Key Attributes
Model Number: MMBT3904W
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
100@10mA,1V
Transition Frequency(fT):
300MHz
Number:
1 NPN
Type:
NPN
Vce Saturation(VCE(sat)):
300mV
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3904W
Package:
SOT-323
Product Description

Product Overview

The MMBT3904W is an NPN Silicon Epitaxial Planar Transistor designed for switching and amplifier applications. It offers a range of DC current gain values, breakdown voltages, and saturation voltages suitable for various electronic circuits.

Product Attributes

  • Brand: SLKOR
  • Type: NPN Silicon Epitaxial Planar Transistor
  • Model: MMBT3904W

Technical Specifications

Parameter Symbol Value Unit Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage VCBO 60 V
Collector Emitter Voltage VCEO 40 V
Emitter Base Voltage VEBO 6 V
Collector Current IC 200 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Characteristics (Ta = 25 C)
DC Current Gain hFE 40 - VCE = 1 V, IC = 0.1 mA
70 300 VCE = 1 V, IC = 1 mA
100 - VCE = 1 V, IC = 10 mA
60 - VCE = 1 V, IC = 50 mA
30 - VCE = 1 V, IC = 100 mA
Collector Emitter Cutoff Current ICES - 50 nA VCE = 30 V
Emitter Base Cutoff Current IEBO - 50 nA VEB = 3 V
Collector Base Breakdown Voltage V(BR)CBO 60 V IC = 10 A
Collector Emitter Breakdown Voltage V(BR)CEO 40 V IC = 1 mA
Emitter Base Breakdown Voltage V(BR)EBO 6 V IE = 10 A
Collector Emitter Saturation Voltage VCE(sat) - 0.2 V IC = 10 mA, IB = 1 mA
- 0.3 V IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage VBE(sat) 0.65 0.85 V IC = 10 mA, IB = 1 mA
- 0.95 V IC = 50 mA, IB = 5 mA
Transition Frequency fT 300 MHz VCE = 20 V, -IE = 10 mA, f = 100 MHz
Collector Output Capacitance Cob - 4 pF VCB = 10 V, f = 100 KHz
Delay Time td - 35 ns VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Rise Time tr - 35 ns VCC = 3 V, VBE(OFF) = 0.5 V, IC = 10 mA, IB1 = 1 mA
Storage Time tstg - 200 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA
Fall Time tf - 50 ns VCC = 3 V, IC = 10 mA, IB1 = -IB2 = 1 mA

2210091830_Slkor-MMBT3904W_C5186012.pdf

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