Power Switching MOSFET Siliup SP010N45GTH 100V N Channel with Low RDSon and Split Gate Trench Technology
Key Attributes
Model Number:
SP010N45GTH
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V;60mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.4pF
Number:
1 N-channel
Output Capacitance(Coss):
94pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
392pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP010N45GTH
Package:
TO-252-3L
Product Description
SP010N45GTH 100V N-Channel Power MOSFET
Product Overview
The SP010N45GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for battery management and uninterruptible power supply systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N45GTH
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Drain-Source ON Resistance | RDS(on)TYP | @10V | 45 | m | ||
| Drain-Source ON Resistance | RDS(on)TYP | @4.5V | 60 | m | ||
| Continuous Drain Current | ID | 15 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 15 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 10 | A | ||
| Pulsed Drain Current | IDM | 60 | A | |||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.57 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.7 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 10A | - | 45 | 56 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 8A | - | 60 | 80 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 392 | - | pF |
| Output Capacitance | Coss | - | 94 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 3.4 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=10A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg d | - | 2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=10A RG = 3 | - | 4.5 | - | nS |
| Rise Time | tr | - | 5 | - | ||
| Turn-Off Delay Time | td(off) | - | 13 | - | ||
| Fall Time | tf | - | 5 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 15 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 2 | - | nS |
| Reverse Recovery Charge | Qrr | - | 35 | - | nC | |
Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. |
Applications
- Power switching application
- Battery management
- Uninterruptible power supply
Order Information
| Device | Package | Unit/Tube | Marking |
|---|---|---|---|
| SP010N45GTH | TO-252 | 2500 | 010N45G *: Product code, *: Week code |
2504101957_Siliup-SP010N45GTH_C42403241.pdf
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