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quality SINO IC SEBT9015 Plastic Encapsulated Transistor for FM VHF Tuner Amplifier and Oscillator Circuits factory
quality SINO IC SEBT9015 Plastic Encapsulated Transistor for FM VHF Tuner Amplifier and Oscillator Circuits factory

SINO IC SEBT9015 Plastic Encapsulated Transistor for FM VHF Tuner Amplifier and Oscillator Circuits

Key Attributes
Model Number: SEBT9015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@1mA,5V
Transition Frequency(fT):
150MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
300mV@100mA,50mA
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-
Mfr. Part #:
SEBT9015
Package:
SOT-23
Product Description

Product Overview

The SEBT90XX series from ShangHai Sino-IC Microelectronic Co., Ltd. comprises PNP and NPN plastic-encapsulated transistors designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. These transistors offer a high current gain bandwidth product and are suitable for inverter, interface, and driver functionalities. The series includes complementary pairs such as 9012 (PNP) and 9013 (NPN), and 9014 (NPN) and 9015 (PNP).

Product Attributes

  • Brand: Sino-IC
  • Origin: China
  • Material: Plastic-Encapsulate
  • Product Family: SEBT90XX

Technical Specifications

Model Type Collector-Base Voltage (VCBO) (V) Collector-Emitter Voltage (VCEO) (V) Emitter-Base Voltage (VEBO) (V) Collector Current (IC) (mA) Collector Power Dissipation (PC) (mW) DC Current Transfer Ratio (hfe) Transition Frequency (fT) (MHz)
9012 PNP -40 -25 -5 -500 300 120 - 400 (VCE=-1V, IC=-50mA) 150 (VCE=-6V, IC=-20mA, f=30MHz)
9013 NPN 40 25 5 500 300 120 - 400 (VCE=1V, IC=50mA) 150 (VCE=6V, IC=20mA, f=30MHz)
9014 NPN 50 45 5 100 200 200 - 1000 (VCE=5V, IC=1mA) 150 (VCE=5V, IC=10mA, f=30MHz)
9015 PNP -50 -45 -5 -100 200 200 - 1000 (VCE=-5V, IC=-1mA) 150 (VCE=-5V, IC=-10mA, f=30MHz)
9016 NPN 30 20 4 25 200 28 - 198 (VCE=5V, IC=1mA) 400 (VCE=5V, IC=1mA, f=400MHz)
9018 NPN 30 15 5 50 200 70 - 190 (VCE=5V, IC=1mA) 800 (VCE=5V, IC=5mA, f=400MHz)
Parameter Symbol Conditions 9012 (Min/Typ/Max) 9013 (Min/Typ/Max) 9014 (Min/Typ/Max) 9015 (Min/Typ/Max) 9016 (Min/Typ/Max) 9018 (Min/Typ/Max) Unit
Collector-base breakdown voltage BVCBO IC=-100A, IE=0 -40 40 50 -50 30 30 V
Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0 -25 25 45 -45 20 15 V
Emitter-base breakdown voltage BVEBO IE=-100A, IC=0 -5 5 5 -5 4 5 V
Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 0.1 0.1 -0.1 0.1 0.05 A
Collector cutoff current ICEO VCE=-20V, IB=0 -0.1 0.1 0.1 -0.1 0.1 0.1 A
Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 0.1 0.1 -0.1 0.1 0.1 A
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.6 0.6 0.3 -0.3 0.3 0.5 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 1.2 1 -1 1.2 1.4 V
Parameter Symbol Conditions 9012 (Min/Typ/Max) 9013 (Min/Typ/Max) 9014 (Min/Typ/Max) 9015 (Min/Typ/Max) 9016 (Min/Typ/Max) 9018 (Min/Typ/Max) Unit
DC current transfer ratio hfe VCE=-1V, IC=-50mA 120 - 400
DC current transfer ratio hfe VCE=1V, IC=50mA 120 - 400
DC current transfer ratio hfe VCE=5V, IC=1mA 200 - 1000 28 - 198 70 - 190
DC current transfer ratio hfe VCE=-5V, IC=-1mA 200 - 1000
Transition frequency fT VCE=-6V, IC=-20mA, f=30MHz 150 MHz
Transition frequency fT VCE=6V, IC=20mA, f=30MHz 150 MHz
Transition frequency fT VCE=5V, IC=10mA, f=30MHz 150 MHz
Transition frequency fT VCE=-5V, IC=-10mA, f=30MHz 150 MHz
Transition frequency fT VCE=5V, IC=1mA, f=400MHz 400 MHz
Transition frequency fT VCE=5V, IC=5mA, f=400MHz 800 MHz
Package Type Available Models
SOT-23 SEBT9012, SEBT9013, SEBT9014, SEBT9015, SEBT9016, SEBT9018
TO-92 SEBT9012, SEBT9013, SEBT9014, SEBT9015, SEBT9016, SEBT9018

2410121248_SINO-IC-SEBT9015_C393127.pdf

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