NPN General Purpose Amplifier with 200mA Collector Current Slkor MMBT3904M in Small Outline Package

Key Attributes
Model Number: MMBT3904M
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Type:
NPN
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3904M
Package:
SOT-723
Product Description

Product Overview

The MMBT3904M is an NPN general-purpose amplifier designed for a wide range of applications. It offers robust performance with a power dissipation capability of 100mW and a collector current of 200mA. This device operates within a junction temperature range of -55 to 150 and is housed in a small outline surface mount package. It is RoHS compliant and a Green EMC device.

Product Attributes

  • Device Marking Code: MMBT3904M
  • Type: NPN General Purpose Amplifier
  • Compliance: RoHS compliant / Green EMC
  • Package Type: Small Outline Surface Mount Package (SOT723)

Technical Specifications

Symbol Parameter Test Conditions Min Max Units
Maximum Ratings (Ta = 25 unless otherwise noted)
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
PC Collector Power Dissipation 100 mW
IC Collector Current 200 mA
TJ Junction Temperature 150
TSTG Storage Temperature -55 150
RJA Thermal Resistance From Junction To Ambient 1250 /W
Electrical Characteristics (Ta = 25 Unless Otherwise Specified)
VCBO Collector-Base Breakdown Voltage IC = 10A, IE =0 60 V
VCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB =0 40 V
VEBO Emitter-Base Breakdown Voltage IE = 10A, IC =0 6 V
ICBO Collector-Base Cutoff Current VCB = 30V, IE =0 100 nA
ICEX Collector-Emitter Cutoff Current VCE = 30V, VBE =3V 50 nA
IEBO Collector Cutoff Current VEB = 5V, IC =0 100 nA
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB =1mA 0.2 V
IC = 50mA, IB =5mA 0.3 V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB =1mA 0.65 0.85 V
IC = 50mA, IB =5mA 0 0.95 V
hFE DC Current Gain VCE = 1V, IC =0.1mA 40
VCE = 1V, IC =1mA 70
VCE = 1V, IC =10mA 100 300
VCE = 1V, IC =50mA 60
fT Current Gain-Bandwidth Product VCE = 20V, IC =10mA, f=100MHz 300 MHz
Switching Characteristics
td Delay Time VCC = 3V, IC =10mA , VBE = -0.5V, IB1 =1mA 35 nS
tr Rise Time 35 nS
tS Storage Time VCC = 3V, IC =10mA , IB1 = IB2 =1mA 200 nS
tf Fall Time 50 nS
Ordering Information
Device Package Shipping Tape wide Emboss pitch Tape specification
MMBT3904M SOT723 8000pcs /7 Reel 8 mm 4 mm Conductive

2209051730_Slkor-MMBT3904M_C5155531.pdf

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