Power Switching Bipolar Transistor Slkor SL13003 with 400V Collector Emitter Voltage and 1A Current

Key Attributes
Model Number: SL13003
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10uA
Transition Frequency(fT):
5MHz
Vce Saturation(VCE(sat)):
500mV@200mA,40mA
Type:
NPN
Pd - Power Dissipation:
1.25W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SL13003
Package:
TO-126-3
Product Description

Product Overview

The SL13003 is a bipolar transistor designed for power switching applications. It offers a high collector-emitter breakdown voltage of 400V and a continuous collector current of 1A, with a power dissipation of 1.25W. This transistor is suitable for general-purpose power switching and amplification tasks in various electronic circuits.

Product Attributes

  • Brand: SLKOR Micro
  • Model: SL13003
  • Package Type: TO-126
  • Equivalent Circuit Pins: 1. BASE, 2. COLLECTOR, 3. EMITTER
  • Datasheet Revision: Rev.1
  • Datasheet Date: 03 May 2019

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO (Ta=25 unless otherwise noted) 600 V
Collector-Emitter Voltage VCEO (Ta=25 unless otherwise noted) 400 V
Emitter-Base Voltage VEBO (Ta=25 unless otherwise noted) 6 V
Collector Current - Continuous IC (Ta=25 unless otherwise noted) 1 A
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 1.25 W
Thermal Resistance Junction to Ambient RJA (Ta=25 unless otherwise noted) 100 /W
Operation Junction and Storage Temperature Range TJ,Tstg (Ta=25 unless otherwise noted) -55 +150
Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 600 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 400 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 6 V
Collector cut-off current ICBO VCB=600V,IE=0 100 uA
Collector cut-off current ICEO VCE=400V,IB=0 100 uA
Emitter cut-off current IEBO VEB=7V,IC=0 10 uA
DC current gain hFE(1) VCE=10V, IC=200mA 20 30
DC current gain hFE(2) VCE=10V, IC=250A 5
Collector-emitter saturation voltage VCE(sat) IC=200mA,IB=40mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=200mA,IB=40mA 1.1 V
Transition frequency fT VCE=10V, IC=100mA,f=1MHz 5 MHz
Fall time tf IC=100mA 0.5 s
Storage time tS* IC=100mA 2 4 s

2401101507_Slkor-SL13003_C5122524.pdf

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