P Channel Enhancement Mode MOS FET Slkor SL3409 Featuring Low On State Resistance and SOT 23 Package
Key Attributes
Model Number:
SL3409
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
P-Channel
Number:
1 P-Channel
Output Capacitance(Coss):
115pF
Input Capacitance(Ciss):
954pF
Pd - Power Dissipation:
1W
Mfr. Part #:
SL3409
Package:
SOT-23
Product Description
Product Overview
P-Channel Enhancement-Mode MOS FETs designed for various electronic applications. These devices offer reliable performance with key electrical characteristics detailed below.
Product Attributes
- Brand: SLKormicro
- Model: SL3409
- Package: SOT-23
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | -30 | - | - | V | (ID = -250uA,VGS=0V) |
| Gate Threshold Voltage | VGS(th) | -1.4 | - | -2.4 | V | (ID = -250uA,VGS= VDS) |
| Diode Forward Voltage Drop | VSD | - | - | -1 | V | (IS= -1A,VGS=0V) |
| Zero Gate Voltage Drain Current | IDSS | - | - | -1 | uA | (VGS=0V, VDS= -24V) |
| Zero Gate Voltage Drain Current | IDSS | - | - | -5 | uA | (VGS=0V, VDS= -24V, TA=55) |
| Gate Body Leakage | IGSS | - | - | +100 | nA | (VGS=+12V, VDS=0V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | - | 130 | m | (ID= -2.2A,VGS= -10V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | - | 200 | m | (ID= -2A,VGS= -4.5V) |
| Input Capacitance | CISS | - | 954 | - | pF | (VGS=0V, VDS= -15V,f=1MHz) |
| Output Capacitance | COSS | - | 115 | - | pF | (VGS=0V, VDS= -15V,f=1MHz) |
| Turn-ON Time | t(on) | - | 6.3 | - | ns | (VDS= -15V, VGS= -10V, RGEN=6) |
| Turn-OFF Time | t(off) | - | 38.2 | - | ns | (VDS= -15V, VGS= -10V, RGEN=6) |
Maximum Ratings
| Characteristic | Symbol | Max | Unit | |
| Drain-Source Voltage | BVDSS | -30 | V | |
| Gate-Source Voltage | VGS | +20 | V | |
| Drain Current (continuous) | ID | -2.2 | A | |
| Drain Current (pulsed) | IDM | -16 | A | |
| Total Device Dissipation | PD | 1000 | mW | (TA=25) |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | Tstg | -55to+150 |
2111122130_Slkor-SL3409_C2918942.pdf
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