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quality 200mW Schottky Diode Taiwan Semiconductor BAS40-04 RFG Low Forward Voltage Drop for Adapter Circuits factory
quality 200mW Schottky Diode Taiwan Semiconductor BAS40-04 RFG Low Forward Voltage Drop for Adapter Circuits factory

200mW Schottky Diode Taiwan Semiconductor BAS40-04 RFG Low Forward Voltage Drop for Adapter Circuits

Key Attributes
Model Number: BAS40-04 RFG
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Operating Junction Temperature Range:
-65℃~+125℃
Voltage - DC Reverse (Vr) (Max):
44V
Diode Configuration:
1 Pair Series Connection
Reverse Leakage Current (Ir):
200nA@30V
Voltage - Forward(Vf@If):
1V@40mA
Current - Rectified:
200mA
Mfr. Part #:
BAS40-04 RFG
Package:
SOT-23
Product Description

Product Overview

The BAS40 series are 200mW, Low VF SMD Schottky Barrier Diodes designed for surface mounting. They feature low capacitance, low forward voltage drop, and low stored charge, making them suitable for applications such as adapters and switching power supplies. These diodes are compliant with RoHS directive 2011/65/EU, WEEE 2002/96/EC, and are halogen-free according to IEC 61249-2-21.

Product Attributes

  • Brand: Taiwan Semiconductor
  • Series: BAS40 / -04 / -05 / -06
  • Certifications: RoHS directive 2011/65/EU, WEEE 2002/96/EC, IEC 61249-2-21 (Halogen-free)
  • Material: Molding compound: UL flammability classification rating 94V-0; Terminal: Matte tin plated leads
  • Moisture Sensitivity: Level 1, per J-STD-020
  • Whisker Test: Meet JESD 201 class 1A
  • Color: Green compound (halogen-free) when packing code suffix "G" is used

Technical Specifications

ParameterSymbolBAS40BAS40-04BAS40-05BAS40-06UnitConditions
Repetitive peak reverse voltageVRRM40404040V
Forward currentIF(AV)200200200200mA
Non-repetitive peak forward surge currentIFSM0.60.60.60.6A@ t = 8.3ms
Forward voltageVF1.001.001.001.00Vat IF=40mA
Maximum Junction TemperatureTJ Max.125125125125C
PackageSOT-23SOT-23SOT-23SOT-23
Marking code on the device43444546
Junction temperature rangeTJ-65 to +125-65 to +125-65 to +125-65 to +125C
Storage temperature rangeTSTG-65 to +125-65 to +125-65 to +125-65 to +125C
Junction-to-ambient thermal resistanceRJA357357357357C/W
Forward voltage per diodeVF-0.38-0.38-0.38-0.38VIF = 1mA, TJ = 25C
Reverse current per diodeIR-0.2-0.2-0.2-0.2AVR=30V, TJ = 25C
Reverse Breakdown VoltageV(BR)40404040VIR=10A
Junction capacitanceCJ-5.0-5.0-5.0-5.0pF1 MHz, VR=1V
Reverse Recovery Timetrr-5.0-5.0-5.0-5.0nsIF=IR=10mA, RL=100, IRR=1mA

2304140030_Taiwan-Semiconductor-BAS40-04-RFG_C486009.pdf

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