86--136 6733 2386
quality Silkor TIP127 Silicon PNP Darlington Transistor Designed for General Purpose Amplifier and Switching factory
quality Silkor TIP127 Silicon PNP Darlington Transistor Designed for General Purpose Amplifier and Switching factory

Silkor TIP127 Silicon PNP Darlington Transistor Designed for General Purpose Amplifier and Switching

Key Attributes
Model Number: TIP127
Product Custom Attributes
Current - Collector Cutoff:
200uA
DC Current Gain:
1000
Vce Saturation(VCE(sat)):
4V@5A,20mA
Type:
PNP
Pd - Power Dissipation:
65W
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
100V
Mfr. Part #:
TIP127
Package:
TO-220
Product Description

Product Overview

Silicon PNP Darlington Power Transistors designed for general-purpose amplifier and low-speed switching applications. These transistors feature a TO-220 package, high DC current gain, and low collector saturation voltage. They are complementary to the TIP120/121/122 types.

Product Attributes

  • Package: TO-220
  • Technology: Silicon PNP Darlington
  • Brand: slkormicro (implied by website address)

Technical Specifications

Model Parameter Conditions Value Unit
TIP125/126/127 Collector-base voltage (VCBO) Open emitter -60 (TIP125) / -80 (TIP126) / -100 (TIP127) V
Collector-emitter voltage (VCEO) Open base -60 (TIP125) / -80 (TIP126) / -100 (TIP127) V
Emitter-base voltage (VEBO) Open collector -5 V
TIP125/126/127 Collector current-DC (IC) -5 A
Collector current-Pulse (ICM) -8 A
Base current-DC (IB) -120 mA
TIP125/126/127 Collector power dissipation (PC) TC=25 65 W
Collector power dissipation (PC) Ta=25 2 W
TIP125/126/127 Junction temperature (Tj) 150
TIP125/126/127 Storage temperature (Tstg) -65~150
TIP125/126/127 Collector-emitter sustaining voltage (VCEO(SUS)) IC=-0.1A, IB=0 -60 (TIP125) / -80 (TIP126) / -100 (TIP127) V
Collector-emitter saturation voltage (VCEsat-1) IC=-3A ,IB=-12mA -2.0 V
Collector-emitter saturation voltage (VCEsat-2) IC=-5A ,IB=-20mA -4.0 V
TIP125/126/127 Base-emitter on voltage (VBE) IC=-3.0A ; VCE=-3V -2.5 V
TIP125/126/127 Collector cut-off current (ICBO) TIP125 VCB=-60V, IE=0 / TIP126 VCB=-80V, IE=0 / TIP127 VCB=-100V, IE=0 -0.2 mA
Collector cut-off current (ICEO) TIP125 VCE=-30V, IB=0 / TIP126 VCE=-40V, IB=0 / TIP127 VCE=-50V, IB=0 -0.5 mA
Emitter cut-off current (IEBO) VEB=-5V; IC=0 -2 mA
TIP125/126/127 DC current gain (hFE-1) IC=-0.5A ; VCE=-3V 1000
DC current gain (hFE-2) IC=-3.0A ; VCE=-3V 1000
TIP125/126/127 Output capacitance (Cob) IE=0 ; VCB=-10V,f=0.1MHz 300 pF

Package Dimensions (TO-220)

Symbol Size (Min) Size (Max) Symbol Size (Min) Size (Max) Symbol Size (Min) Size (Max) Symbol Size (Min) Size (Max)
W 9.66 10.28 W5 9.80 10.20 L4** 6.20 6.60 T3 0.45 0.60
W1 2.54 (TYP) L 9.00 9.40 L5 2.79 3.30 G() 3.50 3.70
W2 0.70 0.95 L1 6.40 6.80 T 4.30 4.70
W3 1.17 1.37 L2 2.70 2.90 T1 1.15 1.40
W4 1.32 1.72 L3 12.70 14.27 T2 2.20 2.60

2204201445_Slkor-TIP127_C2999992.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction factory
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
quality Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature factory
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
quality Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads factory
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.