P Channel MOSFET Slkor SLE0D50AP with fully characterized avalanche energy and low on resistance
Key Attributes
Model Number:
SLE0D50AP
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
RDS(on):
6.5mΩ@10V;10mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
360pF
Output Capacitance(Coss):
495pF
Pd - Power Dissipation:
30W
Input Capacitance(Ciss):
2.69nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
SLE0D50AP
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SLE0D50AP is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, ensuring good stability and uniformity with high EAS. This MOSFET is ideal for battery and loading switching applications and boasts an excellent package for efficient heat dissipation.
Product Attributes
- Brand: SLKORMicro
- Model: SLE0D50AP
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | |||||
| VDS | -30 | V | |||
| VGS | ±20 | V | |||
| EAS | Single pulse avalanche energy | 81 | mJ | ||
| TJ,TSTG | Storage Temperature Range | -55 | 175 | °C | |
| IS | Diode Continuous Forward Current (Tc=25°C) | -50 | A | ||
| IDM | Pulse Drain Current (Tc=25°C) | -200 | A | ||
| ID | Tested Continuous Drain Current (Tc=25°C) | -50 | A | ||
| PD | Maximum Power Dissipation (TA=25°C) | W | |||
| RθJA | Thermal Resistance Junction-Ambient | 55 | ° C/W | ||
| Common Ratings | |||||
| VGS | Gate-Source Voltage (TC=25°C) | V | |||
| BV(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V, ID=-250μA) | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=-30V, VGS=0V) | -1 | μA | ||
| IGSS | Gate-Body Leakage Current (VGS=±20V, VDS=0V) | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage (VDS=VGS, ID=-250μA) | -1 | -1.5 | -2.2 | V |
| RDS(on) | Drain-Source On-State Resistance (VGS=-10V, ID=-15A) | 6.5 | 8 | mΩ | |
| RDS(on) | Drain-Source On-State Resistance (VGS=-4.5V, ID=-10A) | 10 | 13 | mΩ | |
| CISS | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 2690 | pF | ||
| COSS | Output Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 495 | pF | ||
| CRSS | Reverse Transfer Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 360 | pF | ||
| Qg | Total Gate Charge (VDD=-15V, ID=-20A, VGS=-10V) | 45 | nC | ||
| Qgs | Gate Source Charge (VDD=-15V, ID=-20A, VGS=-10V) | 6.2 | nC | ||
| Qgd | Gate Drain Charge (VDD=-15V, ID=-20A, VGS=-10V) | 13.5 | nC | ||
| td(on) | Turn-on Delay Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 11 | nS | ||
| tr | Turn-on Rise Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 9.5 | nS | ||
| td(off) | Turn-Off Delay Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 24 | nS | ||
| tf | Turn-Off Fall Time (VDD=-15V, ID=-20A, VGS=-10V, RG=3Ω) | 12 | nS | ||
| VSD | Forward on voltage (Tj=25°C, Is=-28A) | -1.2 | V | ||
2412171034_Slkor-SLE0D50AP_C42415162.pdf
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