N Channel Power MOSFET Slkor 2N7002E Ideal for High Current Handling and Surface Mount Applications

Key Attributes
Model Number: 2N7002E
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002E
Package:
SOT-23
Product Description

Product Overview

The 2N7002E is an N-Channel Power MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications. This MOSFET is ideal for PWM applications, load switching, and power management.

Product Attributes

  • Brand: SLKORMicro
  • Certifications: Lead-free product acquired
  • Package: SOT-23

Technical Specifications

CharacteristicSymbolMinTypMaxUnitNotes
Drain-Source Breakdown VoltageBVDSS60V(ID =250uA,VGS=0V)
Gate Threshold VoltageVGS(th)1.02.5V(ID =250uA,VGS= VDS)
Drain-Source On VoltageVDS(ON)0.375V(ID=50mA,VGS=5V)
Drain-Source On VoltageVDS(ON)3.75V(ID =500mA,VGS=10V)
Diode Forward Voltage DropVSD1.5V(ISD=200mA,VGS=0V)
Zero Gate Voltage Drain CurrentIDSS1uA(VGS=0V, VDS= BVDSS)
Gate Body LeakageIGSS+1uA(VGS=+10V, VDS=0V)
Gate Body LeakageIGSS+10uA(VGS=+20V, VDS=0V)
Static Drain-Source On-State ResistanceRDS(ON)3(ID=500mA,VGS=10V)
Static Drain-Source On-State ResistanceRDS(ON)3.5(ID=50mA,VGS=5V)
ESD RatingESD1000VHBM
Drain-Source VoltageBVDSS60V
Gate- Source VoltageVGS+20V
Drain Current (continuous)IDR300mA
Drain Current (pulsed)IDRM500mA
Total Device DissipationPD225mWTA=25
Derate above 251.8mW/
Thermal Resistance Junction to AmbientRJA417/W
Junction and Storage TemperatureTJ,Tstg-55150

SOT-23 Package Information

SymbolMIN.MAX.Unit
A0.9001.150
A10.0000.100
A20.9001.050
b0.3000.500
c0.0800.150
D2.8003.000
E1.2001.400
E12.2502.550
e0.950TYP
e11.8002.000
L0.550REF
L10.3000.500
08

2410010103_Slkor-2N7002E_C350312.pdf

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