N Channel Superjunction MOSFET 650V 11A Slkor SL11N65CD designed for avalanche and commutation modes
Key Attributes
Model Number:
SL11N65CD
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
318mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Input Capacitance(Ciss):
920pF@25V
Pd - Power Dissipation:
87W
Gate Charge(Qg):
15.5nC@10V
Mfr. Part #:
SL11N65CD
Package:
TO-252
Product Description
Product Overview
This SL11N65CD is a 650V, 11A N-Channel Super-JMOSFET produced using Slkor's advanced Superjunction MOSFET technology. This technology is optimized for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. It is well-suited for high-efficiency switched-mode power supplies.
Product Attributes
- Brand: Slkor
- Technology: Super-JMOSFET
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| General Features | |||||
| Drain-Source Voltage (VDSS) | 650 | V | |||
| Continuous Drain Current (ID) | TC = 25 | 11 | A | ||
| Continuous Drain Current (ID) | TC = 100 | 7 | A | ||
| Pulsed Drain Current (IDM) | (Note 1) | 28.8 | A | ||
| Gate-Source Voltage (VGSS) | ±30 | V | |||
| Single Pulsed Avalanche Energy (EAS) | (Note 2) | 246 | mJ | ||
| Avalanche Current (IAR) | (Note 1) | 11 | A | ||
| Repetitive Avalanche Energy (EAR) | 6.25 | mJ | |||
| Peak Diode Recovery dv/dt | (Note 3) | 20 | V/ns | ||
| MOSFET dv/dt | 100 | ||||
| Power Dissipation (PD) | TC = 25 | 87 | W | ||
| Derate above 25 | 0.7 | W/ | |||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | +150 | |||
| Maximum lead temperature for soldering | 1/8" from case for 5 seconds | 300 | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction-to-Case (RJC) | 1.43 | /W | |||
| Thermal Resistance, Case-to-Sink (RJS) | Typ. | -- | /W | ||
| Thermal Resistance, Junction-to-Ambient (RJA) | 62.5 | /W | |||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1 mA | 650 | V | ||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1 mA, TJ = 150 | 650 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 600 V, VGS = 0 V | 1 | µA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = 480 V, TC = 125 | 2 | µA | ||
| Gate-Body Leakage Current, Forward (IGSSF) | VGS = 30 V, VDS = 0 V | 100 | nA | ||
| Gate-Body Leakage Current, Reverse (IGSSR) | VGS = -30 V, VDS = 0 V | -100 | nA | ||
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 0.8mA | 2.5 | 4.5 | V | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10 V, ID = 4.0 A | 318 | 380 | mΩ | |
| Gate resistance (RG) | F=1MHz | 1.0 | Ω | ||
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 25 V, VGS = 0 V, f =1MHz | 920 | pF | ||
| Output Capacitance (Coss) | 20 | pF | |||
| Time Related Output Capacitance (Co(tr)) | VDS = 0V to 400 V, VGS = 0 V | 239 | pF | ||
| Energy Related Output Capacitance (Co(er)) | 30 | pF | |||
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 400 V, ID = 4.0A, RG = 10 Ω (Note 4, 5) | 8 | ns | ||
| Turn-On Rise Time (tr) | 13 | ns | |||
| Turn-Off Delay Time (td(off)) | 30 | ns | |||
| Turn-Off Fall Time (tf) | 8 | ns | |||
| Total Gate Charge (Qg) | VDS =400 V, ID = 4.0A, VGS = 10 V (Note 4, 5) | 15.5 | nC | ||
| Gate-Source Charge (Qgs) | 3.0 | nC | |||
| Gate-Drain Charge (Qgd) | 7.9 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||
| Maximum Continuous Drain-Source Diode Forward Current (IS) | 9.6 | A | |||
| Maximum Pulsed Drain-Source Diode Forward Current (ISM) | 28.8 | A | |||
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0 V, IS = 4.0A | 1.2 | V | ||
| Reverse Recovery Time (trr) | VDD = 400 V, IS = 4.0A, dIF / dt = 100 A/us (Note 4) | 221 | ns | ||
| Reverse Recovery Charge (Qrr) | 1.8 | µC | |||
2401051154_Slkor-SL11N65CD_C5632289.pdf
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