Ultra Low On Resistance Load Switching MOSFET Slkor IRLML6402 P Channel TrenchFET for Portable Devices
Key Attributes
Model Number:
IRLML6402
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
135mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
110pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
633pF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8nC@4.5V
Mfr. Part #:
IRLML6402
Package:
SOT-23
Product Description
Product Overview
The IRLML6402 is a P-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It features ultra-low on-resistance and is available in tape and reel packaging.
Product Attributes
- Brand: IRLML6402
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -3.7 | A | |||
| Pulsed Diode Current | IDM | -22 | A | |||
| Power Dissipation | PD | (Ta=25) | 1.4 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | (t≤5s) | 100 | °C/W | ||
| Operating Junction Temperature | TJ | 150 | °°C | |||
| Storage Temperature | TSTG | -55 | +150 | °°C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250µA | -0.4 | -1.2 | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = ±12V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -20V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS = -4.5V, ID = -3.7A | 50 | 65 | mΩ | |
| VGS = -2.5V, ID = -3A | 80 | 135 | mΩ | |||
| Forward transconductance | gfs | VDS = -4.5V, ID = -3.7A | 6 | S | ||
| Diode forward voltage | VSD | IS=-1A, VGS=0V | -0.8 | -1.2 | V | |
| Continuous Source-Drain Diode Current | IS | -1.3 | A | |||
| Input capacitance | Ciss | VDS = -10V,VGS =0V, f=1MHz | 633 | pF | ||
| Output capacitance | Coss | 145 | pF | |||
| Reverse transfer capacitance | Crss | 110 | pF | |||
| Total gate charge | Qg | VDS = -10V,VGS = -4.5V, ID = -3.7A | 8.0 | nC | ||
| Gate-source charge | Qgs | 1.2 | nC | |||
| Gate-drain charge | Qgd | 2.8 | nC | |||
| Gate resistance | Rg | f=1MHz | 6.5 | Ω | ||
| Turn-on delay time | td(on) | VDS= -10V RL=6Ω, ID ≈ -1A, VGEN=- 4.5V,Rg=3Ω | 12 | ns | ||
| Rise time | tr | 30 | ns | |||
| Turn-off delay time | td(off) | 60 | ns | |||
| Fall time | tf | 50 | ns | |||
| Body Diode Reverse Recovery Time | Trr | IF= -3.7A, dI/dt=100A/µs | 29 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= -3.7A, dI/dt=100A/µs | 11 | nC |
2311201732_Slkor-IRLML6402_C5155451.pdf
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