Trench Technology N Channel MOSFET SL4822A Designed for High Frequency Point of Load Power Converters
Key Attributes
Model Number:
SL4822A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
23mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
2 N-Channel
Input Capacitance(Ciss):
1.25nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
SL4822A
Package:
SOP-8
Product Description
Product Overview
The SL4822A is an N-Channel MOSFET featuring advanced high cell density Trench technology, offering super low gate charge and excellent CdV/dt effect decline. It is designed for high frequency point-of-load synchronous buck converters, networking DC-DC power systems, and load switch applications. This device is also available as a Green Device.
Product Attributes
- Brand: SLKORMicro
- Model: SL4822A
- Technology: Trench
- Package: SOP-8
- Certifications: Green Device Available
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| VGS | Gate-Source Voltage | 20 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -55 | 150 | C | ||
| IS | Diode Continuous Forward Current | Tc=25C | 8 | A | ||
| IDM | Pulse Drain Current | Tc=25C | 30 | A | ||
| ID | Tested Continuous Drain Current@GS=10V | Tc=25C | 8.5 | A | ||
| PD | Maximum Power Dissipation | Tc=25C | 1.4 | W | ||
| RJA | Thermal Resistance Junction-Ambient | (*1 in2 Pad of 2-oz Copper), Max. | 89 | C/W | ||
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30VVGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1 | 1.5 | 2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V ID=8A | -- | 11.5 | 16 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=6A | -- | 18 | 23 | m |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| CISS | Input Capacitance | VDS=15VVGS=0V f=1MHz | -- | 1250 | -- | pF |
| COSS | Output Capacitance | VDS=15VVGS=0V f=1MHz | -- | 180 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | -- | 110 | -- | pF |
| Switching Characteristics | ||||||
| Qg | Total Gate Charge | VDS=15VRL=1.8 VGS=10VRG=3 | -- | 15 | -- | nC |
| Qgs | Gate Source Charge | VDS=15VRL=1.8 VGS=10VRG=3 | -- | 2.5 | -- | nC |
| Qgd | Gate Drain Charge | VDS=15VRL=1.8 VGS=10VRG=3 | -- | 3 | -- | nC |
| td(on) | Turn-on Delay Time | VDS=15VRL=1.8 VGS=10VRG=3 | -- | 5 | -- | nS |
| tr | Turn-on Rise Time | VDS=15VRL=1.8 VGS=10VRG=3 | -- | 3.5 | -- | nS |
| td(off) | Turn-Off Delay Time | VDS=15VRL=1.8 VGS=10VRG=3 | -- | 19 | -- | nS |
| tf | Turn-Off Fall Time | VDS=15VRL=1.8 VGS=10VRG=3 | -- | 3.5 | -- | nS |
| Source- Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25Is=1A | -- | -- | 1.2 | V |
2409302204_Slkor-SL4822A_C2965537.pdf
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