Durable Slkor IRF640 N Channel MOSFET transistor with fast switching speed and low gate threshold voltage
Key Attributes
Model Number:
IRF640
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+175℃
RDS(on):
150mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
150W
Mfr. Part #:
IRF640
Package:
TO-220
Product Description
Product Overview
Efficient and reliable N-Channel MOSFET transistor for a wide variety of applications. Features include static drain-source on-resistance as low as 150m, enhancement mode, fast switching speed, 100% avalanche tested, and minimum lot-to-lot variations for robust performance.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V; ID =250A | 200 | V | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS; ID =250A | 2 | 4 | V | |
| RDS(on) | Drain-Source On-Resistance | VGS=10V; ID=11A | 150 | m | ||
| IGSS | Gate-Source Leakage Current | VGS= 20V | 0.1 | A | ||
| IDSS | Drain-Source Leakage Current | VDS=200V; VGS= 0V | 25 | A | ||
| VSD | Diode forward voltage | IF=11A; VGS = 0V | 1.3 | V | ||
| VDSS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | 18 | A | |||
| IDM | Drain Current-Single Pulsed | 72 | A | |||
| PD | Total Dissipation @TC=25 | 150 | W | |||
| Tj Max. | Operating Junction Temperature | 175 | ||||
| Tstg | Storage Temperature | -55 | 175 | |||
| Rth(ch-c) | Channel-to-case thermal resistance | 1 | /W | |||
| Rth(ch-a) | Channel-to-ambient thermal resistance | 62 | /W |
2410121549_Slkor-IRF640_C5122558.pdf
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