Low noise figure high gain transistor Slkor 2SC3585 R45 in compact SOT 23 3L package for high frequency

Key Attributes
Model Number: 2SC3585 R45
Product Custom Attributes
Emitter-Base Voltage(Vebo):
1.5V
Current - Collector Cutoff:
100nA
DC Current Gain:
250@10mA,6V
Transition Frequency(fT):
10GHz
Vce Saturation(VCE(sat)):
-
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
35mA
Collector - Emitter Voltage VCEO:
10V
Operating Temperature:
-
Mfr. Part #:
2SC3585 R45
Package:
SOT-23-3L
Product Description

Product Overview

The 2SC3585 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured using a planar process. It offers high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in a surface-mount SOT-23-3L, this transistor is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.

Product Attributes

  • Brand: SLKOR (implied by URL www.slkormicro.com)
  • Type: NPN Silicon Epitaxial Bipolar Transistor
  • Process: Planar
  • Package: SOT-23-3L

Technical Specifications

Key Features:

  • High Gain: |S21e| typical 5.5dB @ VCE=6V, IC=10mA, f=2GHz
  • Low Noise: NF typical 2.5dB @ VCE=6V, IC=5mA, f=2GHz
  • Gain Bandwidth Product: fT typical 10GHz @ VCE=6V, IC=10mA, f=1GHz

Absolute Maximum Ratings (TA=25):

Parameter Symbol Rating Unit
Collector-Base Breakdown Voltage VCBO 20 V
Collector-Emitter Breakdown Voltage VCEO 10 V
Emitter-Base Breakdown Voltage VEBO 1.5 V
Collector Current IC 35 mA
Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Tstg -65 ~ +150

HFE Classification:

Classification A B C D
Label R43 R44 R45 -
HFE 60-100 90-140 120-180 170-250

Electrical Characteristics (TA=25):

Parameter Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage VCBO 20 - - V IC=1.0A
Collector-Base Leakage Current ICBO - - 0.1 A VCB=10V
Emitter-Base Leakage Current IEBO - - 0.1 A VEB=1V
DC Current Gain HFE 60 150 250 - VCE=6V, IC=10mA
Gain Bandwidth Product fT 10 - - GHz VCE=6V, IC=10mA
Output Feedback Capacitance Cre - 0.3 0.8 pF VCB=10V, IE=0mA, f=1MHz
Power Gain | S21e | - 5.5 - dB VCE=6V, IC=10mA, f=2GHz
Noise Figure NF - 2.5 3.0 dB VCE=6V, IC=5mA, f=2GHz

Package Dimensions (SOT-23-3L):

Symbol Min (mm) Max (mm)
A 0.35 0.5
B 1.4 1.7
C 2.7 3.1
D 0.95 -
G 1.7 2.1
H 2.7 3.1
K 1 1.3
L 0.5 0.85
M 0.1 0.35

Pin Definition:

  • 1: Base
  • 2: Emitter
  • 3: Collector

Scattering Parameters (S-PARAMETER)

Test Condition: VCE=6V, IC=10mA, ZO=50

Frequency (GHz) S11 S21 S12 S22
MAG ANG MAG ANG MAG ANG MAG ANG
0.1 0.606 -51.368 19.070 138.27 0.023 70.41 0.908 -22.132
0.2 0.518 -77.739 14.243 124.69 0.034 70.41 0.727 -40.023
0.3 0.394 -99.576 11.550 114.38 0.048 70.41 0.586 -48.554
0.4 0.324 -117.74 9.522 108.01 0.057 70.41 0.510 -53.937
0.5 0.280 -132.78 7.968 101.63 0.067 70.41 0.474 -58.933
0.6 0.248 -147.46 6.768 96.468 0.078 70.41 0.443 -63.31
0.7 0.219 -161.53 5.979 90.103 0.089 70.41 0.434 -68.85
0.8 0.203 -173.71 5.342 86.881 0.096 70.41 0.418 -73.843
0.9 0.189 174.27 4.910 80.73 0.106 70.41 0.415 -79.324
1.0 0.176 162.27 4.425 80.638 0.112 70.41 0.409 -86.129
1.1 0.170 149.78 3.895 74.155 0.127 70.41 0.407 -91.361
1.2 0.166 139.57 3.577 72.048 0.136 70.41 0.392 -99.5
1.3 0.156 128.37 3.245 65.426 0.145 70.41 0.395 -103.49
1.4 0.162 117.71 3.071 65.638 0.160 70.41 0.393 -110.83
1.5 0.150 111.08 2.725 61.089 0.171 70.41 0.396 -113.86
1.6 0.158 97.675 2.562 63.587 0.181 70.41 0.400 -122.82
1.7 0.157 90.954 2.172 57.097 0.199 70.41 0.415 -125.46
1.8 0.173 79.571 2.182 57.936 0.217 70.41 0.415 -135.65
1.9 0.160 69.719 1.898 56.337 0.225 70.41 0.408 -136.44
2.0 0.181 58.602 1.940 60.143 0.245 70.41 0.428 -148.92

2009141834_Slkor-2SC3585-R45_C781325.pdf

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