Low Gate Threshold Voltage N Channel MOSFET Slkor 2N7002KM with Fast Switching and Low Capacitance
Product Overview
The 2N7002KM is an N-Channel Enhancement MOSFET designed for general-purpose applications. It features low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds, making it suitable for various electronic circuits. The device is ESD protected up to 2KV HBM.
Product Attributes
- Brand: SLKOR
- Model: 2N7002KM
- Package: SOT-723
- Certifications: ESD Protected 2KV HBM
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=100A, VGS=0V | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS = 10V, ID = 1mA | 1 | 2.5 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=500mA | 2 | |||
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=50mA | 3 | |||
| Forward Transfer Admittance | |Yfs| | VGS=10V, ID=200mA | 80 | mS | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1MHz | 50 | pF | ||
| Output Capacitance | Coss | VDS = 10V, ID = 1mA | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Total Gate Charge | Qg | VGS=4.5V, VDS=15V, ID=200mA | 0.8 | nC | ||
| Turn-On Delay Time | td(on) | ID=200mA, VDS=30V, RG=10,VGEN=10V,RL=150 | 20 | ns | ||
| Turn-Off Delay Time | td(off) | ID=200mA, VDS=30V, RG=10,VGEN=10V,RL=150 | 40 | ns | ||
| Drain Current -Continuous | ID | 300 | mA | |||
| Drain Current -Pulsed | ID | 800 | mA | |||
| Power Dissipation | PD | Device mounted on FR-4 PCB | 350 | mW | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | 357 | C/W | |||
| Junction Temperature | TJ | 150 | C | |||
| Junction and Storage Temperature Range | Tstg | -55 | 150 | C |
2405071034_Slkor-2N7002KM_C22392349.pdf
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