N channel mosfet Slkor SL4184 offering performance and low on resistance for power management devices

Key Attributes
Model Number: SL4184
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
146pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
1.46nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
SL4184
Package:
TO-252
Product Description

Product Description

The SL4184 is an N-Channel MOSFET designed for power management applications in desktop computers and DC/DC converters. It offers a reliable and rugged performance with key features like low on-resistance (RDS(ON)) at both 10V and 4.5V gate-source voltages. This device is Lead Free and Green, complying with RoHS standards.

Product Attributes

  • Brand: SLKORMicro
  • Type: N-Channel MOSFET
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, IDS=250A40--V
Drain-Source Avalanche Voltage (Maximum)BVDS(Avalanche)*--45-V
Gate-Source VoltageVGSS--±20-±V
Maximum Junction TemperatureTJ---175°C
Storage Temperature RangeTSTG--55-175°C
Diode Continuous Forward CurrentISTC=25°C--40A
300μs Pulse Drain CurrentIDPTested TC=100°C--300μsA
Continuous Drain CurrentIDTC=25°C--60***A
Maximum Power DissipationPDTC=25°C--60W
Thermal Resistance-Junction to CaseRθJC--2.5-°C/W
Thermal Resistance-Junction to AmbientRθJA--50-°C/W
Drain-Source Avalanche EnergyEAS**L=0.5mH-100-mJ
Diode Forward VoltageVSDa--0.8-1.1V
Reverse Recovery Timetrr---28-ns
Reverse Recovery ChargeQrr---24-nC
Gate ResistanceRGb-1.4-Ω
Input CapacitanceCiss--1460-pF
Output CapacitanceCoss--180-pF
Reverse Transfer CapacitanceCrss--146-pF
Turn-on Delay Timetd(ON)b-1121ns
Turn-on Rise Timetrb-1324ns
Turn-off Delay Timetd(OFF)b-3767ns
Turn-off Fall Timetfb-1121ns
Total Gate ChargeQgb-31.244nC
Gate-Source ChargeQgsb-3.8--
Gate-Drain ChargeQgdb-9--
Zero Gate Voltage Drain CurrentIDSSVDS=32V, VGS=0V--1μA
Gate Threshold VoltageVGS(th)VDS=VGS, IDS=250μA1.21.62V
Gate Leakage CurrentIGSSVGS=±20V, VDS=0V--±100nA
Drain-Source On-state ResistanceRDS(ON)a-7.29
Drain-Source On-state ResistanceRDS(ON)a-9.213

2204201445_Slkor-SL4184_C2999976.pdf

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