60V Drain Source Voltage N Channel MOSFET Slkor SL2310 with 3A Continuous Drain Current Capability
Key Attributes
Model Number:
SL2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
125mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
247pF@30V
Pd - Power Dissipation:
1.7W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
SL2310
Package:
SOT-23
Product Description
Product Overview
The SL2310 is a N-Channel Power MOSFET designed for high power and current handling capabilities. It features a VDS of 60V and an ID of 3A, with low RDS(ON) values of <105m @ VGS=10V and <125m @ VGS=4.5V. This lead-free product is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: SLKOR Micro
- Origin: China (implied by www.slkormicro.com)
- Material: Lead-free product acquired
- Certifications: Lead-free
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 3 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 10 | A | |||
| Maximum Power Dissipation | PD | 1.7 | W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 150 | ||
| Thermal Resistance,Junction-to-Ambient (Note 2) | RJA | 73.5 | /W | |||
| Electrical Characteristics (TA=25unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | 65 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1.0 | 1.3 | 2.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=3A | - | 78 | 105 | mΩ |
| VGS=4.5V, ID=3A | - | 95 | 125 | mΩ | ||
| Forward Transconductance | gFS | VDS=15V,ID=2A | 3 | - | - | S |
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | - | 247 | - | PF | |
| Output Capacitance | Coss | - | 34 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=30V,VGS=0V, F=1.0MHz | - | 19.5 | - | PF |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=1.5A VGS=10V,RGEN=1Ω | - | 6 | - | nS |
| Turn-on Rise Time | tr | - | 15 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 15 | - | nS | |
| Turn-Off Fall Time | tf | - | 10 | - | nS | |
| Total Gate Charge | Qg | - | 6 | - | nC | |
| Gate-Source Charge | Qgs | - | 1 | - | nC | |
| Gate-Drain Charge | Qg d | VDS=30V,ID=3A, VGS=4.5V | - | 1.3 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage (Note 3) | VSD | VGS=0V,IS=3A | - | - | 1.2 | V |
| Diode Forward Current (Note 2) | IS | - | - | 3 | A | |
1912111437_Slkor-SL2310_C400798.pdf
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