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quality High Current Handling NPN Silicon Transistor Slkor BCP68-25 Designed for Switching and Amplification factory
quality High Current Handling NPN Silicon Transistor Slkor BCP68-25 Designed for Switching and Amplification factory

High Current Handling NPN Silicon Transistor Slkor BCP68-25 Designed for Switching and Amplification

Key Attributes
Model Number: BCP68-25
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@500mA,1V
Transition Frequency(fT):
40MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
500mV@1A,100mA
Type:
NPN
Pd - Power Dissipation:
1.35W
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-45℃~+150℃
Mfr. Part #:
BCP68-25
Package:
SOT-223
Product Description

Product Overview

The BCP68 is an NPN silicon transistor designed for general-purpose switching and amplification applications, particularly those requiring high current conditions. It offers a high current capability of up to 1 A and a low voltage rating of up to 20 V. This transistor is suitable for scenarios demanding robust performance under elevated current loads.

Product Attributes

  • Type: NPN Silicon Transistor
  • Model: BCP68
  • Package: SOT-223
  • Pinout: 1. BASE, 2. COLLECTOR, 3. EMITTER

Technical Specifications

Parameter Symbol Conditions Rating Unit
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage (Open Emitter) VCBO 32 V
Collector-Emitter Voltage (Open Base) VCEO 20 V
Emitter-Base Voltage (Open Collector) VEBO 5 V
DC Collector Current IC 1 A
Peak Collector Current ICM 2 A
Peak Base Current IBM 200 mA
Total Power Dissipation (Ta 25) PD 1.35 W
Junction Temperature TJ 150
Operating Temperature TOPR -45 ~ +150
Storage Temperature TSTG -65 ~ +150
THERMAL DATA
Thermal Resistance From Junction To Ambient JA 91 /W
ELECTRICAL CHARACTERISTICS (TJ = 25, unless otherwise specified.)
Collector-Emitter Saturation Voltage VCE(SAT) IC = 1A, IB =100mA 500 mV
IC = 5mA, VCE = 10V 620 mV
Base-Emitter Voltage VBE IC = 1A, VCE = 1V 1 V
Collector Cut-off Current ICBO IE = 0, VCB = 25V 100 nA
IE = 0, VCB = 25V, TJ = 150 10 A
Emitter Cut-off Current IEBO IC = 0, VEB = 5V 100 nA
DC Current Gain hFE IC = 5mA, VCE = 10V 50
IC = 500mA, VCE = 1V 85 300
IC = 1A, VCE = 1V 60
Collector Capacitance CC IE = ie = 0, VCB = 5V, f = 1MHz 48 pF
Transition Frequency fT IC = -10mA, VCE = -5V, f = 100MHz 40 MHz
DC Current Gain Ratio of the Complementary Pairs hFE1 / hFE2 |IC| = 0.5A, |VCE| = 1V 1.6

hFE CLASSIFICATION

RANK RANGE
16 100~250
200~300

2110220930_Slkor-BCP68-25_C2909806.pdf

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