Low RDS ON Power MOSFET Slkor BSS169 100V N Channel TrenchFET for Surface Mount Electronic Circuits
Key Attributes
Model Number:
BSS169
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-40℃~+150℃
RDS(on):
234mΩ@10V,1A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
13pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
190pF@50V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
60nC@4.5V
Mfr. Part #:
BSS169
Package:
SOT-23
Product Description
Product Overview
The BSS169 is a 100V N-Channel TrenchFET Power MOSFET designed for surface mount applications. It features low RDS(ON) and is suitable for various electronic circuits requiring efficient power switching.
Product Attributes
- Brand: slkormicro
- Model: BSS169
- Package: SOT-23
Technical Specifications
| Parameter | Conditions | Min | Max | Units |
| Drain-source breakdown voltage | VGS = 0V , ID = 250A | 100 | V | |
| Gate threshold voltage | VDS = 50V , VGS = VGS , ID = 250A | 1.2 | 2.8 | V |
| Drain-source on-resistance | VGS = 10V , ID = 1.5A | 234 | m | |
| Drain-source on-resistance | VGS = 6V , ID = 1A | 267 | m | |
| Drain-source on-resistance | VGS = 4.5V , ID = 0.5A | 278 | m | |
| Continuous drain current | 2 | A | ||
| Pulsed drain current | DM* | 8 | A | |
| Power dissipation | 350 | mW | ||
| Junction temperature | -40 | +150 | C | |
| Storage temperature | -55 | +150 | C | |
| Gate-source voltage | 20 | V | ||
| Input capacitance | VDS=50V , VGS=0V, f=1MHZ | 45 | pF | |
| Output capacitance | VDS=50V , VGS=0V, f=1MHZ | 39 | pF | |
| Reverse transfer capacitance | VDS=50V , VGS=0V, f=1MHZ | 26 | pF | |
| Turn-on delay time | VGS = 4.5V , ID = 0.5A | 13 | nS | |
| Turn-on rise time | VGS = 4.5V , ID = 0.5A | 20 | nS | |
| Turn-off delay time | VGS = 4.5V , ID = 0.5A | 22 | nS | |
| Turn-off fall time | VGS = 4.5V , ID = 0.5A | 190 | nS | |
| Total gate charge | VDS=50V , VGS=4.5V ID=1.6A | 5.8 | nC | |
| Gate-drain charge | VDS=50V , VGS=4.5V ID=1.6A | 1.4 | nC | |
| Gate-source charge | VDS=50V , VGS=4.5V ID=1.6A | 0.75 | nC | |
| Gate resistance | F=1MHZ | 0.3 | ||
| Zero gate voltage drain current | VDS = 100V , VGS = 0V | 1 | A | |
| Gate-body leakage current | VGS = 20V, VDS = 0V | 100 | nA | |
| Diode forward voltage | IS = 1.3A , VGS = 0V | 1.2 | V |
2302061809_Slkor-BSS169_C5355491.pdf
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