power MOSFET Slkor SL12N100T with fast switching low gate charge and 100 percent avalanche tested
Key Attributes
Model Number:
SL12N100T
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2Ω@10V,6A
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
17pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.83nF@25V
Pd - Power Dissipation:
272W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
SL12N100T
Package:
TO-247
Product Description
Product Overview
This product is a high-performance MOSFET designed for efficient power switching applications. It features low gate charge, low Crss, and fast switching speeds, making it ideal for demanding power supply designs. The device is 100% avalanche tested and offers improved dv/dt capability, ensuring reliability and robustness in operation. It is RoHS compliant.
Product Attributes
- Brand: SL K (implied from URL)
- Certifications: RoHS product
Technical Specifications
| Parameter | Symbol | SL12N100/ T (TO-247) | SL12N100 (TO-263/TO-220) | SL12N100F (TO-220F) | Unit | Notes |
|---|---|---|---|---|---|---|
| Features | ||||||
| Low gate charge | ||||||
| Low Crss | typ 13 | pF | ||||
| Fast switching | ||||||
| 100% avalanche tested | ||||||
| Improved dv/dt capability | ||||||
| RoHS product | ||||||
| Applications | ||||||
| High frequency switching mode power supply | ||||||
| Electronic ballast based on half bridge | ||||||
| LED power supplies | ||||||
| Absolute Ratings (Tc=25) | ||||||
| Drain-Source Voltage | VDSS | 1000 | V | |||
| Drain Current-continuous (T=25) | ID | 12 | A | |||
| Drain Current-continuous (T=100) | ID | 8 | A | |||
| Drain Current-pulse | IDM | 64* | A | note 1 | ||
| Gate-Source Voltage | VGS | 30 | V | |||
| Single pulse avalanche energy | EAS | 858 | mJ | note 2 | ||
| Avalanche Current | IAR | 12 | A | note 1 | ||
| Repetitive Avalanche Energy | EAR | 27.7 | mJ | note 1 | ||
| Power Dissipation | PD (TC=25) | 272 | 100 | 68 | W | |
| Derate above 25 | 2.17 | 0.8 | 0.54 | W/ | ||
| Operating and Storage Temperature Range | TJ,TSTG | -55~+150 | ||||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ||||
| Electrical Characteristics (TCASE=25 unless otherwise specified) | ||||||
| Drain-Source Voltage | BVDSS | 1000 | V | ID=250A,VGS=0V | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/ TJ | 0.98 | V/ | ID=250A,referenced to 25 | ||
| Zero Gate Voltage Drain Current | IDSS (VDS=800V,VGS=0VTC=25) | 1 | A | |||
| Zero Gate Voltage Drain Current | IDSS (VDS=720V,TC =125) | 10 | A | |||
| Gate body leakage current | IGSS | 100 | nA | VDS=0V,VGS=30V | ||
| Gate Threshold Voltage | VGS(th) | 3.0 - 5.0 | V | VDS=VGS,ID=250A | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.0 - 1.2 | VGS=10V,ID=6ATC=25 | |||
| Forward Transconductance | gFS | 9.5 | S | VDS=40V,ID=6A (note 4) | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | 2150 - 2830 | pF | VDS=25V, VGS=0V, f=1.0MHZ | ||
| Output capacitance | Coss | 189 - 246 | pF | |||
| Reverse transfer capacitance | Crss | 13 - 17 | pF | |||
| Switching Characteristics | ||||||
| Turn-On delay time | td(on) | 53 - 121 | ns | VDD=600V,ID=12A, RGEN=25 (note 4,5) | ||
| Turn-On rise time | tr | 116 - 235 | ns | |||
| Turn-Off delay time | td(Off) | 97 - 199 | ns | |||
| Turn-Off rise time | tf | 69 - 171 | ns | |||
| Total Gate Charge | Qg | 43 - 56 | nC | VDS=800V,ID=12A, VGS=10V (note 4,5) | ||
| Gate-Source charge | Qgs | 15 | nC | |||
| Gate-Drain charge | Qg d | 21 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | 1.4 | V | VGS=0V,IS=12A (note 3) | ||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 48 | A | |||
| Maximum Continuous Drain Source Diode Forward Current | IS | 12 | A | |||
| Reverse recovery time | trr | 539 | ns | VGS=0V, IS=8A dIF/dt=100A/s (note 4) | ||
| Reverse recovery charge | Qrr | 6.41 | C | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,junction to Case | Rth(j-C) | 0.46 | 1.25 | 1.84 | /W | |
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 40 | 62.5 | 62.5 | /W | |
| Order Information | ||||||
| Order codes | Package | Packaging | ||||
| SL12N100T | TO-247 | Tube | ||||
| SL12N100 | TO-263 | Tube | ||||
| SL12N100 | TO-220 | Tube | ||||
| SL12N100F | TO-220F | Tube | ||||
2409302300_Slkor-SL12N100T_C5375311.pdf
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