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quality SOT363 Package NPN PNP Silicon Epitaxial Planar Transistors Slkor MMDT5451 Series for Circuit Design factory
quality SOT363 Package NPN PNP Silicon Epitaxial Planar Transistors Slkor MMDT5451 Series for Circuit Design factory

SOT363 Package NPN PNP Silicon Epitaxial Planar Transistors Slkor MMDT5451 Series for Circuit Design

Key Attributes
Model Number: MMDT5451
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Transition Frequency(fT):
300MHz
Type:
NPN+PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMDT5451
Package:
SOT-363
Product Description

Product Overview

The MMDT5451 is a series of NPN/PNP Silicon Epitaxial Planar Transistors designed for various applications. These transistors are housed in a SOT-363 package, offering compact integration. The series includes both NPN and PNP types, providing flexibility for circuit design. Key electrical characteristics include DC current gain, breakdown voltages, saturation voltages, current gain bandwidth product, and output capacitance, all detailed across different operating conditions.

Product Attributes

  • Type: NPN / PNP Silicon Epitaxial Planar Transistors
  • Package: SOT-363
  • Brand: SLKORmicro
  • Revision: Rev.1
  • Date: 21 February 2016

Technical Specifications

Q1 (NPN Transistor) Maximum Ratings (Ta = 25)
Parameter Symbol Value Unit
Collector Base Voltage VCBO 180 V
Collector Emitter Voltage VCEO 160 V
Emitter Base Voltage VEBO 6 V
Collector Current IC 0.2 A
Power Dissipation Ptot 0.2 W
Thermal Resistance Junction to Ambient Air RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to +150
Q2 (PNP Transistor) Maximum Ratings (Ta = 25)
Parameter Symbol Value Unit
Collector Base Voltage -VCBO 160 V
Collector Emitter Voltage -VCEO 150 V
Emitter Base Voltage -VEBO 5 V
Collector Current -IC 0.2 A
Power Dissipation Ptot 0.2 W
Thermal Resistance Junction to Ambient Air RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to +150
Q1 (NPN Transistor) Electrical Characteristics at Ta = 25
Parameter Symbol Min. Max. Unit
DC Current Gain at VCE = 5 V, IC = 1 mA hFE 80 300 -
at VCE = 5 V, IC = 10 mA 100 - -
at VCE = 5 V, IC = 50 mA 30 - -
Collector Base Cutoff Current at VCB = 120 V ICBO - 0.05 A
Emitter Base Cutoff Current at VEB = 4 V IEBO - 0.05 A
Collector Base Breakdown Voltage at IC = 100 A V(BR)CBO 180 - V
Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 160 - V
Emitter Base Breakdown Voltage at IE = 10 A V(BR)EBO 6 - V
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA VCE(sat) - 0.15 V
at IC = 50 mA, IB = 5 mA - 0.2 V
Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA VBE(sat) - 1 V
at IC = 50 mA, IB = 5 mA - 1 V
Current Gain Bandwidth Product at VCE = 10 V, IC = 10 mA, f = 100 MHz fT 100 300 MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz Cob - 6 pF
Q2 (PNP Transistor) Electrical Characteristics at Ta = 25
Parameter Symbol Min. Max. Unit
DC Current Gain at -VCE = 5 V, -IC = 1 mA hFE 50 300 -
at -VCE = 5 V, -IC = 10 mA 50 - -
at -VCE = 5 V, -IC = 50 mA - - -
Collector Base Cutoff Current at -VCB = 120 V -ICBO - 50 nA
Emitter Base Cutoff Current at -VEB = 3 V -IEBO - 50 nA
Collector Base Breakdown Voltage at -IC = 100 A -V(BR)CBO 160 - V
Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 150 - V
Emitter Base Breakdown Voltage at -IE = 10 A -V(BR)EBO 5 - V
Collector Emitter Saturation Voltage at -IC = 10 mA, -IB =1 mA -VCE(sat) - 0.2 V
at -IC = 50 mA, -IB = 5 mA - 0.5 V
Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA -VBE(sat) - 1 V
at -IC = 50 mA, -IB = 5 mA - 1 V
Current Gain Bandwidth Product at -VCE = 10 V, -IC = 10 mA, f = 100 MHz fT 100 300 MHz
Output Capacitance at -VCB = 10 V, IE = 0, f = 1 MHz Cobo - 6 pF
DIMENSIONS (mm are the original dimensions)
Symbol Value Unit
A1 0.1 max
bp 0.30
c 0.20
D 2.2
E 1.8
e1 0.25
HE 0.10
Lp 1.35
Q 1.15
y 0.65 e
w 1.3
v 2.2
2.0
0.2
0.1
0.2
0.45
0.15
0.25
0.15
1.1
0.8

2401051153_Slkor-MMDT5451_C19188367.pdf

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