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quality Power Management Device Slkor SL30N02D N Channel MOSFET Featuring Low Gate Charge and 30 Volt Rating factory
quality Power Management Device Slkor SL30N02D N Channel MOSFET Featuring Low Gate Charge and 30 Volt Rating factory

Power Management Device Slkor SL30N02D N Channel MOSFET Featuring Low Gate Charge and 30 Volt Rating

Key Attributes
Model Number: SL30N02D
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
330pF
Number:
1 N-channel
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.82nF@15V
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SL30N02D
Package:
TO-252(DPAK)
Product Description

Product Overview

This N-channel enhancement mode power MOSFET utilizes advanced trench technology, offering excellent RDS(ON) and low gate charge. It is RoHS compliant and designed for efficient power management applications.

Product Attributes

  • Brand: SLKORMicro (implied by URL)
  • Certifications: RoHS

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Unit
General Description
Drain-Source VoltageVDS30V
Gate-Source VoltageVGS±20V
Drain Current-Continuous (TC=25)ID150A
Drain Current-Continuous (TC=100)ID80A
Drain Current-PulsedIDMNote1400A
Avalanche EnergyEASNote4121mJ
Maximum Power Dissipation (TC=25)PD70W
Storage Temperature RangeTSTG-55+150
Operating Junction Temperature RangeTJ-55+150
Thermal Resistance, Junction-to-CaseRJC--2.14/W
OFF CHARACTERISTICS
Drain-Source Breakdown VoltageBVDSSVGS=0V,IDS=250uA30--V
Zero Gate Voltage Drain CurrentIDSSVDS=30V,VGS=0V--1.0uA
Gate-Body LeakageIGSSVGS=±20V,VDS=0V--±100nA
ON CHARACTERISTICS
Gate Threshold VoltageVGS(TH)VDS=VGS,IDS=250uA1.01.52.5V
Drain-Source On-State ResistanceRDS(ON)VGS=10V,IDS=30A-2.84.0m
Drain-Source On-State ResistanceRDS(ON)VGS=4.5V,IDS=20A-4.46.0m
DYNAMIC CHARACTERISTICS
Input CapacitanceCiSSVDS =15V, VGS = 0V, f=1MHz-2820-pF
Output CapacitanceCOSS-393-pF
Reverse Transfer CapacitanceCrss-330-pF
Gate ResistanceRgVDD=0V,VGS=1V, F=1MHz-3.8-
SWITCHING CHARACTERISTICS
Turn-On Delay TimeTd(on)VGS=10V,VDs=15V, RGEN=3 ID=30A-23-ns
Rise Timetr-28-ns
Turn-Off Delay TimeTd(off)-74-ns
Fall Timetf-36-ns
Total Gate ChargeQgVDS=15V,IDS=30A, VGS=10V-30-nC
Gate to Source Gate ChargeQgs-7.2-nC
Gate to DrainMillerChargeQg d-10.4-nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward VoltageVSDVGS=0V,IDS=30A--1.2V
Reverse Recovery TimetrrTJ=25,IF=30A di/dt=100A/us-28-nS
Reverse Recovery ChargeQrr-21-nC

2409302302_Slkor-SL30N02D_C5330391.pdf
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