Epitaxial planar die dual transistor Slkor MMDT2227 designed for amplification and switching circuits
Key Attributes
Model Number:
MMDT2227
Product Custom Attributes
Transition Frequency(fT):
300MHz
Number:
1 NPN + 1 PNP
Type:
NPN+PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT2227
Package:
SOT-363
Product Description
Product Overview
The MMDT2227 is a dual transistor featuring an epitaxial planar die construction, offering a complementary pair of NPN (2222A-Type) and PNP (2907A-Type) transistors. This device is ideal for low-power amplification and switching applications. Its ultra-small surface mount package (SOT-363) makes it suitable for space-constrained designs.
Product Attributes
- Brand: SLKORMICRO
- Package Type: SOT-363
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | MAX | UNIT |
|---|---|---|---|---|---|
| NPN 2222A | |||||
| Collector-Base Voltage | VCBO | - | - | 75 | V |
| Collector-Emitter Voltage | VCEO | - | - | 40 | V |
| Emitter-Base Voltage | VEBO | - | - | 6 | V |
| Collector Current - Continuous | IC | - | - | 600 | mA |
| Power Dissipation | PD | - | - | 200 | mW |
| Thermal Resistance, Junction to Ambient | RJA | - | - | 625 | /W |
| Junction and Storage Temperature | Tj,Tstg | - | -55 | +150 | |
| Collector-base breakdown voltage | V(BR)CBO | IC=10A,IE=0 | 75 | - | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=10mA,IB=0 | 40 | - | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A,IC=0 | 6 | - | V |
| Collector cut-off current | ICBO | VCB=60V,IE=0 | - | 10 | A |
| Collector cut-off current | ICBO | VCB=60V,IE=0,TA=150 | - | 10 | nA |
| Collector cut-off current | ICEX | VCE=60V, VEB(OFF)=3.0V | - | 10 | nA |
| Emitter cut-off current | IEBO | VEB=3V IC=0 | - | 10 | nA |
| Base cut-off current | IBL | VCE=60V VEB(OFF)=3.0V | - | 20 | nA |
| DC current gain | hFE | VCE=10V,IC=100A | 35 | - | - |
| DC current gain | hFE | VCE=10V,IC=1.00mA | 50 | - | - |
| DC current gain | hFE | VCE=10V,IC=10mA | 75 | - | - |
| DC current gain | hFE | VCE=10V,IC=150mA | 100 | - | - |
| DC current gain | hFE | VCE=10V,IC=500mA | 40 | - | - |
| DC current gain | hFE | VCE=10V,IC=10mA,TA=-55 | 50 | - | - |
| DC current gain | hFE | VCE=1.0V,IC=150mA | 35 | 300 | - |
| Collector-emitter saturation voltage | VCE(sat) | IC=150mA IB=15mA | - | 0.3 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC=500mA IB=50mA | - | 1.0 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=150mA IB=15mA | - | 0.6 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=500mA IB=50mA | - | 1.2 | V |
| Transition frequency | fT | VCE=20V,IC=20mA ,f=100MHz | 300 | - | MHz |
| Output Capacitance | Cobo | VCB=10V,f=1.0MHz,IE=0 | - | 8 | pF |
| Input Capacitance | Cibo | VEB=0.5V,f=1.0MHz,IC=0 | - | 25 | pF |
| Noise Figure | NF | VCE=10V,f=1.0kHz,IC=0.1mA Rg=1.0K | - | 4.0 | dB |
| Delay Time | td | - | - | 10 | ns |
| Rise Time | tr | VCC=30V,IC=150mA, VBE(off)=-0.5V,IB1=15mA | - | 25 | ns |
| PNP 2907A | |||||
| Collector-Base Voltage | VCBO | - | - | -60 | V |
| Collector-Emitter Voltage | VCEO | - | - | -60 | V |
| Emitter-Base Voltage | VEBO | - | - | -5 | V |
| Collector Current - Continuous | IC | - | - | -600 | mA |
| Power Dissipation | PD | - | - | 200 | mW |
| Thermal Resistance, Junction to Ambient | RJA | - | - | 625 | /W |
| Junction and Storage Temperature | Tj,Tstg | - | -55 | +150 | |
| Collector-base breakdown voltage | V(BR)CBO | IC=-10A IE=0 | -60 | - | V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-10mA IB=0 | -60 | - | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A IC=0 | -5 | - | V |
| Collector cut-off current | ICBO | VCB=-50V IE=0 | - | -10 | nA |
| Collector cut-off current | ICBO | VCB=-50V IE=0 TA=125 | - | -10 | A |
| Collector cut-off current | ICEX | VCE=-30V VEB(OFF)=-0.5V | - | -50 | nA |
| Base cut-off current | IBL | VCE=-30V VEB(OFF)=-0.5V | - | -50 | nA |
| DC current gain | hFE | VCE=-10V IC=-100A | 75 | - | - |
| DC current gain | hFE | VCE=-10V IC=-1mA | 100 | - | - |
| DC current gain | hFE | VCE=-10V IC=-10mA | 100 | - | - |
| DC current gain | hFE | VCE=-10V IC=-150mA | 100 | - | - |
| DC current gain | hFE | VCE=-10V IC=-500mA | 50 | 300 | - |
| Collector-emitter saturation voltage | VCE(sat) | IC=-150mA IB=-15mA | - | -0.4 | V |
| Collector-emitter saturation voltage | VCE(sat) | IC=-500mA IB=-50mA | - | -1.6 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=-150mA IB=-15mA | - | -1.3 | V |
| Base-emitter saturation voltage | VBE(sat) | IC=-500mA IB=-50mA | - | -2.6 | V |
| Transition frequency | fT | VCE=-20V,IC=-50mA ,f=100MHz | 200 | - | MHz |
| Output Capacitance | Cobo | VCB=-10V,f=1.0MHz,IE=0 | - | -8.0 | pF |
| Input Capacitance | Cibo | VEB=-2.0V,f=1.0MHz,IC=0 | - | 30 | pF |
| Turn-on time | ton | IC=-150mA,VCC=-30V,IB1=-15mA | - | 45 | ns |
| Delay Time | td | - | - | 10 | ns |
| Rise Time | tr | VCC=-30V,IC=-150mA,IB1=-15mA | - | 40 | ns |
| Package Dimensions (SOT-363) | |||||
| Dimension | Symbol | Unit | MIN | MAX | - |
| A | A | mm | 0.8 | 1.1 | - |
| A1 | A1 | mm | 0.00 | 0.10 | - |
| bp | bp | mm | 0.15 | 0.25 | - |
| c | c | mm | 0.10 | 0.20 | - |
| D | D | mm | 1.8 | 2.2 | - |
| E | E | mm | 1.35 | 1.75 | - |
| e | e | mm | - | 1.30 | - |
| e1 | e1 | mm | - | 0.45 | - |
| HE | HE | mm | 1.15 | 1.55 | - |
| Lp | Lp | mm | - | 0.25 | - |
| Q | Q | mm | 0.15 | 0.30 | - |
| v | v | mm | - | 0.1 | - |
| w | w | mm | - | 0.1 | - |
| y | y | mm | - | 0.1 | - |
2206231830_Slkor-MMDT2227_C3041273.pdf
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