Low Input Capacitance N Channel Enhancement Mode Transistor Slkor MMBF170L in Compact SOT 23 Package

Key Attributes
Model Number: MMBF170L
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@4.5V,200mA
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
5pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
50pF@25V
Pd - Power Dissipation:
350mW
Mfr. Part #:
MMBF170L
Package:
SOT-23
Product Description

Product Overview

N-Channel Enhancement Mode Field Effect Transistor designed for low on resistance, low gate threshold voltage, and low input capacitance. Features ESD protection up to 2KV. Packaged in a SOT-23 plastic package.

Product Attributes

  • Brand: slkormicro
  • Model: MMBF170L
  • Marking Code: 6Z
  • Package: SOT-23

Technical Specifications

ParameterSymbolValueUnitMin.Max.
Drain-Source Breakdown VoltageBVDSS60V60-
Zero Gate Voltage Drain CurrentIDSS-µA-1
Gate Source Leakage CurrentIGSS-µA-±10
Gate Threshold VoltageVGS(th)-V12.5
Static Drain Source On-ResistanceRDS(ON)-Ω-3
Static Drain Source On-ResistanceRDS(ON)-Ω-4
Forward Transconductancegfs80mS80-
Input CapacitanceCiss-pF-50
Output CapacitanceCoss-pF-25
Reverse Transfer CapacitanceCrss-pF-5
Drain-Source VoltageVDSS60V
Gate-Source VoltageVGSS±20V
Drain Current (Continuous)ID300mA
Drain Current (Pulse Width ≤ 10 µs)IDM800mA
Total Power DissipationPtot350mW
Operating and Storage Temperature RangeTj, Tstg-55 to 150°C-55150

2410121516_Slkor-MMBF170L_C5330373.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.