TOSHIBA 2SC4207-GR TE85L F High Current Silicon NPN Transistor for Audio Frequency Amplifier Circuits

Key Attributes
Model Number: 2SC4207-GR(TE85L,F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
200@2mA,6V
Transition Frequency(fT):
80MHz
Type:
NPN
Vce Saturation(VCE(sat)):
250mV@100mA,10mA
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-
Mfr. Part #:
2SC4207-GR(TE85L,F
Package:
SC-74A(SOT-753)
Product Description

Product Overview

The TOSHIBA 2SC4207 is a silicon NPN epitaxial transistor utilizing the PCT process, designed for audio frequency general-purpose amplifier applications. It features a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 700), and excellent hFE linearity. It is complementary to the 2SA1618.

Product Attributes

  • Brand: TOSHIBA
  • Origin: Japan (implied by Toshiba Corporation)
  • Material: Silicon
  • Type: NPN Epitaxial Transistor

Technical Specifications

CharacteristicsSymbolRatingUnitTest ConditionMinTyp.Max
Collector-base voltageVCBO60V
Collector-emitter voltageVCEO50V
Emitter-base voltageVEBO5V
Collector currentIC150mA
Base currentIB30mA
Collector power dissipationPC (Note 3)300mW
Junction temperatureTj (Note 1)150C
Junction temperatureTj (Note 2)125C
Storage temperature rangeTstg (Note 1)-55 to 150C
Storage temperature rangeTstg (Note 2)-55 to 125C
Collector cut-off currentICBOAVCB = 60 V, IE = 0 A0.1
Emitter cut-off currentIEBOAVEB = 5 V, IC = 0 A0.1
DC current gainhFE (Note 4)VCE = 6 V, IC = 2 mA120700
Collector-emitter saturation voltageVCE (sat)VIC = 100 mA, IB = 10 mA0.10.25
Transition frequencyfTMHzVCE = 10 V, IC = 1 mA80
Collector output capacitanceCobpFVCB = 10 V, IE = 0 A, f = 1 MHz23.5

2311141400_TOSHIBA-2SC4207-GR-TE85L-F_C17320064.pdf

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