TOSHIBA 2SC4207-GR TE85L F High Current Silicon NPN Transistor for Audio Frequency Amplifier Circuits
Product Overview
The TOSHIBA 2SC4207 is a silicon NPN epitaxial transistor utilizing the PCT process, designed for audio frequency general-purpose amplifier applications. It features a small package (dual type), high voltage and current capabilities (VCEO = 50 V, IC = 150 mA max), high hFE (120 to 700), and excellent hFE linearity. It is complementary to the 2SA1618.
Product Attributes
- Brand: TOSHIBA
- Origin: Japan (implied by Toshiba Corporation)
- Material: Silicon
- Type: NPN Epitaxial Transistor
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition | Min | Typ. | Max |
| Collector-base voltage | VCBO | 60 | V | ||||
| Collector-emitter voltage | VCEO | 50 | V | ||||
| Emitter-base voltage | VEBO | 5 | V | ||||
| Collector current | IC | 150 | mA | ||||
| Base current | IB | 30 | mA | ||||
| Collector power dissipation | PC (Note 3) | 300 | mW | ||||
| Junction temperature | Tj (Note 1) | 150 | C | ||||
| Junction temperature | Tj (Note 2) | 125 | C | ||||
| Storage temperature range | Tstg (Note 1) | -55 to 150 | C | ||||
| Storage temperature range | Tstg (Note 2) | -55 to 125 | C | ||||
| Collector cut-off current | ICBO | A | VCB = 60 V, IE = 0 A | 0.1 | |||
| Emitter cut-off current | IEBO | A | VEB = 5 V, IC = 0 A | 0.1 | |||
| DC current gain | hFE (Note 4) | VCE = 6 V, IC = 2 mA | 120 | 700 | |||
| Collector-emitter saturation voltage | VCE (sat) | V | IC = 100 mA, IB = 10 mA | 0.1 | 0.25 | ||
| Transition frequency | fT | MHz | VCE = 10 V, IC = 1 mA | 80 | |||
| Collector output capacitance | Cob | pF | VCB = 10 V, IE = 0 A, f = 1 MHz | 2 | 3.5 |
2311141400_TOSHIBA-2SC4207-GR-TE85L-F_C17320064.pdf
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