Silicon NPN Transistor TOSHIBA 2SC3325-Y TE85L F for High Voltage Audio Frequency and Switching Uses
Key Attributes
Model Number:
2SC3325-Y(TE85L,F)
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
25@400mA,6V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
250mV
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC3325-Y(TE85L,F)
Package:
TO-236
Product Description
Product Overview
The TOSHIBA 2SC3325 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency applications, driver stage amplification, and switching applications. Key advantages include excellent hFE linearity, high voltage capability (VCEO = 50 V), and a complementary pairing with the 2SA1313. Its small package makes it suitable for various electronic designs.
Product Attributes
- Brand: TOSHIBA
- Origin: Japan (implied by TOSHIBA)
- Material: Silicon
- Package: JEDEC TO-236MOD / JEITA SC-59
- Weight: 0.012 g (typ.)
- Start of Commercial Production: 1982-12
Technical Specifications
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = 50 V, IE = 0 | - | - | 0.1 | A |
| Emitter cut-off current | IEBO | VEB = 5 V, IC = 0 | - | - | 0.1 | A |
| DC current gain | hFE (1) | VCE = 1 V, IC = 100 mA | 70 | - | 240 | - |
| hFE (2) | VCE = 6 V, IC = 400 mA | 25 | - | - | - | |
| Collector-emitter saturation voltage | VCE (sat) | IC = 100 mA, IB = 10 mA | - | 0.1 | 0.25 | V |
| Base-emitter voltage | VBE | VCE = 1 V, IC = 100 mA | - | 0.8 | 1.0 | V |
| Transition frequency | fT | VCE = 6 V, IC = 20 mA | - | 300 | - | MHz |
| Collector output capacitance | Cob | VCB = 6 V, IE = 0, f = 1 MHz | - | 7 | - | pF |
Absolute Maximum Ratings
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 500 | mA |
| Base current | IB | 50 | mA |
| Collector power dissipation | PC | 200 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | 55 to 150 | C |
2410121836_TOSHIBA-2SC3325-Y-TE85L-F_C7421247.pdf
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