Low On Resistance N Channel MOSFET Slkor WNM2021 Designed for Load Switching in Portable Electronics
Key Attributes
Model Number:
WNM2021
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
86mΩ@2.5V,1A
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
80pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
300pF@10V
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
WNM2021
Package:
SOT-323
Product Description
Product Overview
The NM2021 is a W N-Channel TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers efficient power handling with low on-resistance.
Product Attributes
- Brand: W
- Model: NM2021
- Package: SOT-323
- Type: N-Channel MOSFET
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Characteristics | Drain-source breakdown voltage | VGS = 0V, ID =10A | 20 | V | ||
| Gate-threshold voltage | VDS =VGS, ID =50A | 0.65 | 0.95 | 1.2 | V | |
| Gate-body leakage | VDS =0V, VGS =8V | 100 | nA | |||
| Zero gate voltage drain current | VDS =20V, VGS =0V | 1 | A | |||
| Drain-source on-resistance | VGS =4.5V, ID =2A | 0.058 | ||||
| Drain-source on-resistance | VGS =2.5V, ID =1A | 0.086 | ||||
| Forward transconductance | VDS =5V, ID =2.3A | 8 | S | |||
| Diode Characteristics | Diode forward voltage | IS=0.94A,VGS=0V | 0.76 | 1.2 | V | |
| Continuous Source-Drain Current(Diode Conduction) | 0.6 | A | ||||
| Dynamic Characteristics | Total gate charge | VDS =10V,VGS =4.5V,ID =3.6A | 4.0 | 10 | nC | |
| Gate-source charge | VDS =10V,VGS =4.5V,ID =3.6A | 0.65 | nC | |||
| Gate-drain charge | VDS =10V,VGS =4.5V,ID =3.6A | 1.5 | nC | |||
| Input capacitance | VDS =10V,VGS =0V,f=1MHz | 300 | pF | |||
| Output Capacitance | Output capacitance | VDS =10V,VGS =0V,f=1MHz | 120 | pF | ||
| Reverse transfer capacitance | VDS =10V,VGS =0V,f=1MHz | 80 | pF | |||
| Switching Characteristics | Turn-on delay time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 7 | 15 | ns | |
| Rise time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 55 | 80 | ns | ||
| Turn-off delay time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 16 | 60 | ns | ||
| Fall time | VDD=10V, RL=5.5, ID 2.3A, VGEN=4.5V,Rg=6 | 10 | 25 | ns | ||
| Maximum Ratings | Drain-Source Voltage | VDS | 20 | V | ||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 2.3 | A | |||
| Power Dissipation | PD | 0.2 | W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~+150 | |||
| Thermal Resistance | Junction to Ambient (t5s) | RJA | 625 | /W |
2409272300_Slkor-WNM2021_C5223663.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
