Power Management Device Featuring Slkor SL2319A P Channel Enhancement Mode Field Effect Transistor with Low RDS
Key Attributes
Model Number:
SL2319A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
4.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 P-Channel
Input Capacitance(Ciss):
553pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
4.3nC@10V
Mfr. Part #:
SL2319A
Package:
SOT-23
Product Description
Product Overview
The SL2319A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. Its high-density cell design ensures low RDS(ON) and high-speed switching capabilities. This device is designed for applications requiring efficient power management.
Product Attributes
- Brand: SLKormicro (inferred from URL)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | -40 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | -4.4 | A | |||
| Pulsed Drain Current | IDM | -15 | A | |||
| Total Power Dissipation @ TA=25 | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 82 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=-250A | -40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-32V,VGS=0V,TC=25 | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250µA | -1.0 | -1.9 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -10V, ID=-2.0A | 90 | mΩ | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-1.0A | 150 | mΩ | ||
| Diode Forward Voltage | VSD | IS=-2.5A,VGS=0V | -0.8 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -2.0 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-30V,VGS=0V,f=1MHZ | 553 | pF | ||
| Output Capacitance | Coss | 29 | pF | |||
| Reverse Transfer Capacitance | Crss | 20 | pF | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=-10V,VDS=-30V,ID=-1.0A | 4.3 | nC | ||
| Gate Source Charge | Qgs | 1.1 | nC | |||
| Gate Drain Charge | Qg d | 1.5 | nC | |||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDD=-50V, ID=-1A, RGEN=2.5Ω | 12 | ns | ||
| Turn-on Rise Time | tr | 6.8 | ns | |||
| Turn-off Delay Time | tD(off) | 33 | ns | |||
| Turn-off Fall Time | tf | 3 | ns | |||
2201201830_Slkor-SL2319A_C2965530.pdf
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