P Channel Enhancement Mode Field Effect Transistor Slkor IRLML6401 for Load Switching Applications
Key Attributes
Model Number:
IRLML6401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
127pF
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
450mW
Mfr. Part #:
IRLML6401
Package:
SOT-23
Product Description
Product Overview
The IRLML6401 is a P-Channel Enhancement Mode Field Effect Transistor featuring a high-density cell design for extremely low RDS(ON). It offers exceptional on-resistance and maximum current capability, making it suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: SLKORMicro
- Model: IRLML6401
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off characteristics | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| IDSS | VDS =-24V,VGS = 0V | -1 | A | |||
| IGSS | VGS =12V, VDS = 0V | 100 | nA | |||
| On characteristics | RDS(on) | VGS =-10V, ID =-4.2A | 60 | m | ||
| VGS =-4.5V, ID =-4A | 70 | m | ||||
| VGS =-2.5V,ID=-1A | 85 | m | ||||
| Forward tranconductance | gFS | VDS =-5V, ID =-5A | 7 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.7 | -1.3 | V | |
| Dynamic characteristics | Ciss | 1050 | pF | |||
| Coss | 127 | pF | ||||
| Crss | VDS =-15V,VGS =0V,f =1MHz | 85 | pF | |||
| Switching characteristics | td(on) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 6.5 | ns | ||
| tr | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 3.5 | ns | |||
| td(off) | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 40 | ns | |||
| tf | VGS=-10V,VDS=-15V, RL=3.6,RGEN=6 | 13 | ns | |||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -1 | V |
2111122130_Slkor-IRLML6401_C2918943.pdf
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