Built in Bias Resistor Silicon NPN Bipolar Transistor TOSHIBA RN1307 LF for and Compact Circuit Design
Key Attributes
Model Number:
RN1307,LF
Product Custom Attributes
DC Current Gain:
80@10mA,5V
Emitter-Base Voltage VEBO:
6V
Current - Collector(Ic):
100mA
Type:
NPN
Transition Frequency(fT):
250MHz
Input Resistor:
10kΩ
Vce Saturation(VCE(sat)):
300mV@250uA,5mA
Number:
1 NPN (Pre-Biased)
Pd - Power Dissipation:
100mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
RN1307,LF
Package:
SC-70
Product Description
Product Overview
The RN1307 to RN1309 series are silicon NPN epitaxial bipolar transistors featuring integrated bias resistors. These devices are designed for switching, inverter circuits, interfacing, and driver circuits. The built-in bias resistor simplifies circuit design by reducing the need for external components, leading to smaller system sizes and faster assembly times. These transistors are complementary to the RN2307 to RN2309 series and are AEC-Q101 qualified.
Product Attributes
- Brand: Toshiba
- Type: Silicon NPN Epitaxial Bipolar Transistors
- Process: PCT Process
- Feature: Bias Resistor built-in Transistor
- Certification: AEC-Q101 qualified
- Complementary to: RN2307 to RN2309
- Start of Commercial Production: 1988-04
Technical Specifications
| Part No. | R1 (k) | R2 (k) | VCBO (V) | VCEO (V) | VEBO (V) | IC (mA) | PC (mW) | Tj (C) | Tstg (C) | ICBO (nA) | ICEO (A) | IEBO (nA) | hFE (min) | VCE(sat) (V) | VI(ON) (V) | VI(OFF) (V) | fT (MHz) | Cob (pF) | R1 (k) | R1/R2 |
| RN1307 | 10 | 47 | 50 | 50 | 6 | 7 | 150 | 150 | -55 to 150 | 100 | 500 | 0.15 | 80 | 0.081 | 0.7 | 0.5 | 7 | 0.191 | 10 | 0.213 |
| RN1308 | 22 | 47 | 50 | 50 | 6 | 7 | 150 | 150 | -55 to 150 | 100 | 500 | 0.145 | 80 | 0.078 | 1.0 | 0.6 | 15.4 | 0.421 | 22 | 0.468 |
| RN1309 | 47 | 22 | 50 | 50 | 6 | 7 | 150 | 150 | -55 to 150 | 100 | 500 | 0.311 | 70 | 0.167 | 2.2 | 1.5 | 32.9 | 1.92 | 47 | 2.14 |
2312031331_TOSHIBA-RN1307-LF_C5862891.pdf
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