TOSHIBA GT40QR21 STA1 E D discrete IGBT transistor featuring RoHS compatibility and TO 3P N package
Key Attributes
Model Number:
GT40QR21(STA1,E,D
Product Custom Attributes
Pd - Power Dissipation:
230W
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
1.5nF
Pulsed Current- Forward(Ifm):
80A
Reverse Recovery Time(trr):
600ns
Switching Energy(Eoff):
160uJ
Mfr. Part #:
GT40QR21(STA1,E,D
Package:
TO-3P-3
Product Description
GT40QR21 Discrete IGBTs
The GT40QR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features a 6.5th generation IGBT with a monolithically integrated freewheeling diode (RC-IGBT), offering high-speed switching capabilities with typical fall time (tf) of 0.20 s and reverse recovery time (trr) of 0.60 s. The device boasts a low saturation voltage of 1.9 V (typ.) and a high junction temperature capability of 175C (max).
Product Attributes
- Brand: TOSHIBA
- Product Name: GT40QR21
- Package Type: TO-3P(N)
- Certifications: RoHS Compatible
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-emitter voltage | VCES | 1200 | V | (Tc = 25) |
| Gate-emitter voltage | VGES | 25 | V | |
| Collector current (DC) | IC | 40 | A | (Tc = 25) |
| Collector current (DC) | IC | 35 | A | (Tc = 100) |
| Collector current (1 ms) | ICP | 80 | A | |
| Diode forward current (DC) | IF | 20 | A | (Tc = 25) |
| Diode forward current (100 s) | IFP | 80 | A | (Note 1) |
| Collector power dissipation | PC | 230 | W | |
| Junction temperature | Tj | 175 | (max) | |
| Storage temperature | Tstg | -55 to 175 | ||
| Mounting torque | TOR | 0.8 | Nm | |
| Thermal Characteristics | ||||
| Junction-to-case thermal resistance | Rth(j-c) | 0.65 | /W | Max |
| Static Characteristics | ||||
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 1 | mA | VCE = 1200 V, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 4.5 | V | IC = 40 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat)(1) | 1.50 | V | IC = 20 A, VGE = 15 V |
| Collector-emitter saturation voltage | VCE(sat)(2) | 1.75 | V | IC = 20 A, VGE = 15 V, Tj = 125 |
| Collector-emitter saturation voltage | VCE(sat)(3) | 1.89 | V | IC = 20 A, VGE = 15 V, Tj = 175 |
| Collector-emitter saturation voltage | VCE(sat)(4) | 1.90 | V | IC = 40 A, VGE = 15 V |
| Collector-emitter saturation voltage | VCE(sat)(5) | 2.29 | V | IC = 40 A, VGE = 15 V, Tj = 125 |
| Collector-emitter saturation voltage | VCE(sat)(6) | 2.50 | V | IC = 40 A, VGE = 15 V, Tj = 175 |
| Diode forward voltage | VF | 2.70 | V | IF = 15 A, VGE = 0 V |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 1500 | pF | VCE = 10 V, VGE = 0 V, f = 1 MHz |
| Switching time (rise time) | tr | 0.12 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 39 |
| Switching time (turn-on time) | ton | 0.18 | s | Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 39 |
| Switching time (fall time) | tf | 0.20 | s | Inductive Load VCC = 280 V, IC = 40 A, L = 30 H,C = 0.33 F, VGG = 20 V, RG = 10 |
| Switching time (turn-off time) | toff | 0.40 | s | Inductive Load VCC = 280 V, IC = 40 A, L = 30 H,C = 0.33 F, VGG = 20 V, RG = 10 |
| Switching loss (turn-off switching loss) | Eoff(1) | 0.16 | mJ | Inductive Load VCC = 280 V, IC = 40 A, L = 30 H,C = 0.33 H, VGG = 20 V, RG = 10 |
| Switching loss (turn-off switching loss) | Eoff(2) | 0.29 | mJ | Tc = 125 |
| Reverse recovery time | trr | 0.60 | s | IF = 15 A, VGE = 0 V, di/dt = -20 A/s |
2410121943_TOSHIBA-GT40QR21-STA1-E-D_C4153791.pdf
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