power management with Slkor SL10N10A Trench Power MV MOSFET featuring low RDS ON and high density cell design
Key Attributes
Model Number:
SL10N10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-50℃~+150℃
RDS(on):
95mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
1.07nF@50V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
SL10N10A
Package:
SOT-223
Product Description
Product Overview
The SL10N10A is a Trench Power MV MOSFET featuring an N-Channel Enhancement Mode Field Effect Transistor design. It offers excellent heat dissipation capabilities and a high-density cell design for low RDS(ON). This MOSFET is suitable for various applications requiring efficient power management.
Product Attributes
- Brand: SLKormicro
- Model: SL10N10A
- Technology: Trench Power MV MOSFET
- Package: SOT-223
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0V, ID=250A | 100 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | -- | -- | 1 | uA |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.9 | 3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=10A | -- | 80 | 95 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID=8A | -- | 93 | 120 | m |
| Input Capacitance | CISS | VDS=50V, VGS=0V, f=1MHz | -- | 1070 | -- | pF |
| Output Capacitance | COSS | VDS=50V, VGS=0V, f=1MHz | -- | 33 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=50V, VGS=0V, f=1MHz | -- | 30 | -- | pF |
| Total Gate Charge | Qg | VDD=50V, ID=10A, VGS=10V, RG=3 | -- | 26 | -- | nC |
| Gate Source Charge | Qgs | VDD=50V, ID=10A, VGS=10V, RG=3 | -- | 5.4 | -- | nC |
| Gate Drain Charge | Qgd | VDD=50V, ID=10A, VGS=10V, RG=3 | -- | 5.8 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=50V, ID=10A, VGS=10V, RG=3 | -- | 7 | -- | nS |
| Turn-on Rise Time | tr | VDD=50V, ID=10A, VGS=10V, RG=3 | -- | 24 | -- | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, ID=10A, VGS=10V, RG=3 | -- | 25 | -- | nS |
| Turn-Off Fall Time | tf | VDD=50V, ID=10A, VGS=10V, RG=3 | -- | 31 | -- | nS |
| Forward on voltage | VSD | Tj=25, Is=15A | -- | 0.9 | 1.2 | V |
| Continuous Drain Current | ID | Tc=25C | -- | -- | 10 | A |
| Pulse Drain Current | IDM | Tc=25C | -- | -- | 35 | A |
| Diode Continuous Forward Current | IS | Tc=25C | -- | -- | 15 | A |
| Maximum Junction Temperature | TJ | -- | -- | -- | 150 | C |
| Storage Temperature Range | TSTG | -- | -50 | -- | 155 | C |
| Gate-Source Voltage | VGS | -- | -- | -- | 20 | V |
| Thermal Resistance Junction-Ambient | RJA | (*1 in2 Pad of 2-oz Copper), Max. | -- | -- | 40 | C/W |
| Maximum Power Dissipation | PD | Tc=25C | -- | -- | 3.1 | W |
2409302204_Slkor-SL10N10A_C2965540.pdf
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