High cell density trench P Channel MOSFET Slkor IRF9317TR with low gate charge and power dissipation
Key Attributes
Model Number:
IRF9317TR
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
9.5mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
280pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
3.3nF@15V
Pd - Power Dissipation:
4.2W
Mfr. Part #:
IRF9317TR
Package:
SOP-8
Product Description
Product Overview
This P-Channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(on) with low gate charge. It is suitable for a wide range of applications, offering advanced high cell density trench technology for ultra low RDS(ON) and an excellent package for good heat dissipation. This device is also available as a green product.
Product Attributes
- Brand: SLKORMicro (implied by URL)
- Model: IRF9317TR
- Technology: P-Channel MOSFET
- Certifications: Green device available
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | |||||
| VDS | Drain-Source Voltage | -30 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID | Continuous Drain Current-TC=100 | -7.8 | A | ||
| PD | Power Dissipation | 4.2 | W | ||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 | +150 | ||
| Thermal Characteristics | |||||
| RJC | Thermal Resistance,Junction to Case | 30 | /W | ||
| RJA | Thermal Resistance,Junction to Ambient | 60 | G | ||
| Electrical Characteristics (TC=25 unless otherwise noted) | |||||
| Off Characteristics | |||||
| BVDSS | Drain-Sourtce Breakdown Voltage (VGS=0V,ID=250A) | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VGS=0V, VDS=-30V, TJ=25) | -1 | µA | ||
| IGSS | Gate-Source Leakage Current (VGS=±20V, VDS=0A) | ±100 | nA | ||
| On Characteristics | |||||
| VGS(th) | GATE-Source Threshold Voltage (VGS=VDS, ID=250µA) | -1.0 | -1.6 | -2.5 | V |
| RDS(ON) | Drain-Source On Resistance (VGS=-10V,ID=-10A) | 8 | 9.5 | mΩ | |
| RDS(ON) | Drain-Source On Resistance (VGS=-4.5V,ID=-8A) | 12.4 | 15 | mΩ | |
| GFS | Forward Transconductance (VDS=-10V, ID=-10A) | 13 | S | ||
| Dynamic Characteristics | |||||
| Ciss | Input Capacitance (VDS=-15V, VGS=0V, f=1MHz) | 3300 | 4800 | pF | |
| Coss | Output Capacitance | 410 | 700 | pF | |
| Crss | Reverse Transfer Capacitance | 280 | 500 | pF | |
| Switching Characteristics | |||||
| td(on) | Turn-On Delay Time (VDS=-15V, VGS=-10V ID=-1A,RGEN=6Ω) | 24.5 | 38 | ns | |
| tr | Rise Time | 10.5 | 16 | ns | |
| td(off) | Turn-Off Delay Time | 156.8 | 230 | ns | |
| tf | Fall Time | 50 | 75 | ns | |
| Gate Charge | |||||
| Qg | Total Gate Charge (VDS=-15V , VGS=-4.5V , ID=-10A) | 35 | 56 | nC | |
| Qgs | Gate-Source Charge | 10.8 | 16 | nC | |
| Qgd | Gate-Drain Miller Charge | 10.6 | 18 | nC | |
| Drain-Source Diode Characteristics | |||||
| VSD | Source-Drain Diode Forward Voltage (VGS=0V,IS=-1A, TJ=25) | -1 | V | ||
2209051730_Slkor-IRF9317TR_C5155389.pdf
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