Power Switching N Channel MOSFET Featuring Slkor SL4406 with 15A Continuous Drain Current and Low RDS
Key Attributes
Model Number:
SL4406
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
15A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5mΩ@10V,15A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
100pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
910pF@15V
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
17nC@10V
Mfr. Part #:
SL4406
Package:
SOP-8
Product Description
Product Overview
This N-Channel MOSFET offers a 30V drain-source voltage and a continuous drain current of 15A at VGS=10V. It features low on-state resistance, with RDS(ON) < 7.5m at VGS=10V and < 11.0m at VGS=4.5V. Packaged in a SOP-8, it is suitable for various power switching applications.
Product Attributes
- Brand: SLKORMicro (implied by URL)
- Model: SL4406
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250 uA, VGS=0V | 30 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250uA | 1.5 | 2.5 | V | |
| On State Drain Current | ID(ON) | VGS=10V, VDS=5V | 100 | A | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=15A | 7.5 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=4.5V, ID=12A | 11.0 | m | ||
| Forward Transconductance | gFS | VDS=5V, ID=12A | 45 | S | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V, TJ=55 | 5 | uA | ||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 610 | 910 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 88 | 160 | pF | |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 40 | 100 | pF | |
| Gate Resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 0.8 | 2.4 | ||
| Total Gate Charge | Qg | (10V) VGS=10V, VDS=15V, ID=12A | 11 | 17 | nC | |
| Total Gate Charge | Qg | (4.5V) VGS=4.5V, ID=12A | 5 | 8 | nC | |
| Gate Source Charge | Qgs | 1.9 | 2.9 | nC | ||
| Gate Drain Charge | Qgd | 1.8 | 4.2 | nC | ||
| Turn-On DelayTime | td(on) | 4.4 | ns | |||
| Turn-On Rise Time | tr | 9 | ns | |||
| Turn-Off DelayTime | td(off) | 17 | ns | |||
| Turn-Off Fall Time | tf | 6 | ns | |||
| Body Diode Reverse Recovery Time | trr | IF= 12A, dI/dt= 500A/us | 5.6 | 8 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF= 12A, dI/dt= 500A/us | 6.4 | 9.6 | nC | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | |||
| Diode Forward Voltage | VSD | IS=1A,VGS=0V | 1 | V | ||
| Continuous Drain Current | ID | TA=25, VGS = 10V | 15 | A | ||
| Continuous Drain Current | ID | TA=70, VGS = 10V | 12 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Avalanche Current | IAS | 22 | A | |||
| Avalanche energy | EAS | L=0.1mH | 24 | mJ | ||
| Power Dissipation | PD | TA=25 | 3.1 | W | ||
| Power Dissipation | PD | TA=70 | 2 | W | ||
| Thermal Resistance.Junction- to-Lead | RthJL | t 10s | 40 | /W | ||
| Thermal Resistance.Junction- to-Lead | RthJL | Steady-State | 75 | /W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | 24 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 |
2411220202_Slkor-SL4406_C5186043.pdf
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