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quality Surface mount N Channel MOSFET Slkor SL9945 designed for power control in compact electronic devices factory
quality Surface mount N Channel MOSFET Slkor SL9945 designed for power control in compact electronic devices factory

Surface mount N Channel MOSFET Slkor SL9945 designed for power control in compact electronic devices

Key Attributes
Model Number: SL9945
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
104mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
2.1W
Gate Charge(Qg):
3.6nC@4.5V
Mfr. Part #:
SL9945
Package:
SOP-8
Product Description

Product Overview

These miniature surface mount MOSFETs utilize a high cell density trench process for low rDS(on), minimizing power loss and heat dissipation. They are ideal for DC-DC converters and power management in portable and battery-powered products, including computers, printers, PCMCIA cards, and cellular/cordless telephones. Key advantages include higher efficiency, extended battery life, low thermal impedance, fast switching speed, and high-performance trench technology.

Product Attributes

  • Brand: SLKormicro
  • Model: SL9945
  • Type: N-Channel Enhancement Mode MOSFET
  • Package: SOP-8

Technical Specifications

Parameter Symbol Limit Units Notes
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID ±3.6 (TA=25oC), ±3.1 (TA=70oC) A a. Surface Mounted on 1” x 1” FR4 Board.
Pulsed Drain Current IDM ±25 A b. Pulse width limited by maximum junction temperature
Continuous Source Current (Diode Conduction) IS 2 (TA=25oC), 1.3 (TA=70oC) A a. Pulse test: PW <= 300us duty cycle <= 2%.
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 oC
Junction-to-Ambient Thermal Resistance RθJA 62.5 (t <= 10 sec), 110 (t <= 5 sec) oC/W
Gate-Threshold Voltage VGS(th) 1 V VDS = VGS, ID = 250 uA
Gate-Body Leakage IGSS ±100 nA VDS = 0 V, VGS = 20 V
Zero Gate Voltage Drain Current IDSS 1 (VDS = 60 V, VGS = 0 V), 10 (VDS = 60 V, VGS = 0 V, TJ = 55oC) uA
On-State Drain Current ID(on) 20 A VDS = 5 V, VGS = 10 V
Drain-Source On-Resistance rDS(on) 89 (VGS = 10 V), 104 (VGS = 4.5 V) mΩ VGS = 10 V, ID = 3.6 A; VGS = 4.5 V, ID = 3.4 A
Forward Tranconductance gfs 11 S VDS = 15 V, ID = 3.6 A
Diode Forward Voltage VSD 1.1 V IS = 2.0 A, VGS = 0 V
Pulsed Source Current (Body Diode) ISM 3.5 A
Total Gate Charge Qg 3.6 nC VDD = 30 V, RL = 30 Ω, ID = 1 A, VGEN = 10 V
Gate-Source Charge Qgs 1.8 nC
Gate-Drain Charge Qgd 1.3 nC
Turn-On Delay Time td(on) 9 nS
Rise Time tr 10 nS
Turn-Off Delay Time td(off) 21 nS
Fall-Time tf 8 nS

2202132030_Slkor-SL9945_C2843318.pdf

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