650V 50A Trench Field Stop IGBT SPTECH SPT50N65F1A1 for motion control solar and welding applications
Key Attributes
Model Number:
SPT50N65F1A1
Product Custom Attributes
Pd - Power Dissipation:
260W
Td(off):
170ns
Operating Temperature:
-40℃~+150℃
Td(on):
60ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
3.8nF@30V,0V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
162nC@15V
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
600uJ
Turn-On Energy (Eon):
2.2mJ
Mfr. Part #:
SPT50N65F1A1
Package:
TO-247-3
Product Description
Product Overview
The SPT50N65F1A1 is a 650V / 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It offers low switching losses and is ideal for motion control, solar applications, and welding machines. Key features include high breakdown voltage, Trench-Stop technology for high-speed switching and stable ruggedness, low VCEsat, and easy parallel switching capability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | Tj= 25 unless otherwise specified | 650 | V | ||
| DC collector current, limited by Tjmax | IC | TC = 25C | 100 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 50 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 100 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 100C | 50 | A | ||
| Power dissipation, Tj=25 | Ptot | 260 | W | |||
| Operating junction temperature | Tj | -40 | 150 | C | ||
| Storage temperature | Ts | -55 | 150 | C | ||
| Soldering temperature, wave soldering 1.6mm from case for 10s | 260 | C | ||||
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | |||
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |||
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |||
| Electrical Characteristics | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250uA | 650 | V | ||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=1mA | 650 | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.0 | 5.0 | 6.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 25C | 1.65 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 150C | 2.05 | V | ||
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | 0.1 | 1000 | A | |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 150C | 40 | A | ||
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | 100 | nA | ||
| Transconductance | gfs | VCE = 20V, IC = 50A | 50 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | 3800 | pF | ||
| Output capacitance | Coes | VCE = 30V, VGE = 0V, f = 1MHz | 130 | pF | ||
| Reverse transfer capacitance | Cres | VCE = 30V, VGE = 0V, f = 1MHz | 70 | pF | ||
| Gate charge | QG | VCC = 520V, IC = 50A, VGE = 15V | 162 | nC | ||
| Switching Characteristic, Inductive Load (Tj=25) | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 60 | ns | ||
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 55 | ns | ||
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 170 | ns | ||
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 80 | ns | ||
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 2.2 | mJ | ||
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 0.6 | mJ | ||
| Switching Characteristic, Inductive Load (Tj=150) | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 60 | ns | ||
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 60 | ns | ||
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 172 | ns | ||
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 90 | ns | ||
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 2.35 | mJ | ||
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | 0.82 | mJ | ||
| Electrical Characteristics of the DIODE | ||||||
| Diode Forward Voltage | VFM | IF = 50A, Tj= 25 | 2.4 | V | ||
| Reverse Recovery Time | Trr | IF= 40A, VR = 300V, di/dt= 600A/s, Tj= 25 | 90 | ns | ||
| Reverse Recovery Current | Irr | IF= 40A, VR = 300V, di/dt= 600A/s, Tj= 25 | 17 | A | ||
| Reverse Recovery Charge | Qrr | IF= 40A, VR = 300V, di/dt= 600A/s, Tj= 25 | 900 | nC | ||
2505231205_SPTECH-SPT50N65F1A1_C480188.pdf
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