Trench Power MV MOSFET Slkor BSN20 Featuring Low Input Output Leakage and High Switching Speed for Electronics
Product Overview
The BSN20 is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It functions as a voltage-controlled small signal switch with low input capacitance and fast switching speed, offering low input/output leakage. This device is ideal for battery-operated systems, solid-state relays, and direct logic-level interface applications with TTL/CMOS.
Product Attributes
- Brand: slkormicro (implied from URL)
- Model: BSN20
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | 50 | V | |||
| VGS | 20 | V | ||||
| ID | 300 | mA | ||||
| IDM | Pulsed Drain Current | 1.5 | A | |||
| PD | @ TA=25 | 350 | mW | |||
| RJA | Junction-to-Ambient @ Steady State | B | 357 | / W | ||
| TJ ,TSTG | Junction and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics | BVDSS | VGS= 0V, ID=250A | 50 | V | ||
| IDSS | VDS=50V,VGS=0V | 1 | A | |||
| IGSS1 | VGS= 20V, VDS=0V | 100 | nA | |||
| IGSS2 | VGS= 10V, VDS=0V | 50 | nA | |||
| VGS(th) | VDS= VGS, ID=250A | 0.4 | 1.5 | V | ||
| RDS(ON) | VGS= 10V, ID=100mA | 1.3 | 2.5 | |||
| RDS(ON) | VGS= 4.5V, ID=50mA | 1.5 | 3.0 | |||
| Diode Characteristics | VSD | IS=100mA,VGS=0V | 1.2 | V | ||
| IS | Maximum Body-Diode Continuous Current | 100 | mA | |||
| trr | VGS=0V,IS=300mA,VR=25V, dIS/dt=- 100A/s | A. Pulse Test: Pulse Width300us,Duty cycle 2%. | 30 | ns | ||
| Dynamic Parameters | Ciss | VDS=25V,VGS=0V,f=1MHZ | 17.5 | pF | ||
| Coss | 11.5 | pF | ||||
| Crss | 6.5 | pF | ||||
| Qg | VGS=10V,VDS=25V,ID=0.3A | 1.7 | 2.4 | nC | ||
| Switching Parameters | tD(on) | VGS=10V,VDD=25V, ID=300mA, RGEN=6 | 5 | ns | ||
| tD(off) | 17 | ns |
2201201800_Slkor-BSN20_C2965526.pdf
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