IGBT transistor SPTECH IKW50N60H3 featuring 650V breakdown voltage and enhanced avalanche capability
Key Attributes
Model Number:
IKW50N60H3
Product Custom Attributes
Pd - Power Dissipation:
260W
Td(off):
180ns
Operating Temperature:
-40℃~+150℃
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
2.8nF@30V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
180nC@15V
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
1.9mJ
Mfr. Part #:
IKW50N60H3
Package:
TO-247-3
Product Description
Product Overview
The IKW50N60H3 650V Trench Field Stop IGBT offers low switching losses, high energy efficiency, and high avalanche ruggedness. Its Trench-Stop Technology provides high-speed switching, high temperature-stable ruggedness, short circuit withstand time of 5s, low VCEsat, and easy parallel switching capability due to a positive temperature coefficient in VCEsat. It also features enhanced avalanche capability and high breakdown voltage up to 650V for improved reliability.
Product Attributes
- Brand: SPTECH
- Model: IKW50N60H3
- Package: TO247
- Packaging: Tube
- Origin: (Not specified)
- Material: (Not specified)
- Color: (Not specified)
- Certifications: (Not specified)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| DC collector current, limited by Tjmax | IC | TC = 25C | 100 | A | ||
| DC collector current, limited by Tjmax | IC | TC = 100C | 50 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 25C | 100 | A | ||
| Diode Forward current, limited by Tjmax | IF | TC = 100C | 50 | A | ||
| Turn off safe operating area | VCE 650V, Tj 150C | 150 | A | |||
| Short Circuit Withstand Time | Tsc | VGE= 15V, VCE 400V | 5 | s | ||
| Power dissipation | Ptot | Tj=25 | 260 | W | ||
| Operating junction temperature | Tj | -40 | 150 | C | ||
| Storage temperature | Ts | -55 | 150 | C | ||
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | 260 | C | ||||
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | 0.48 | K/W | |||
| Diode thermal resistance, junction - case | R(j-c) | 1.1 | K/W | |||
| Thermal resistance, junction - ambient | R(j-a) | 40 | K/W | |||
| Electrical Characteristics | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250uA | 650 | - | - | V |
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=1mA | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.0 | 5.0 | 6.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 25C | - | - | 1.8 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 150C | - | 2.1 | 2.3 | V |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | - | 0.1 | - | A |
| Zero gate voltage collector current | ICES | VCE = 650V, VGE = 0V, Tj = 150C | - | 40 | 1000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50A | - | 30 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | 2800 | pF | ||
| Output capacitance | Coes | VCE = 30V, VGE = 0V, f = 1MHz | 130 | pF | ||
| Reverse transfer capacitance | Cres | VCE = 30V, VGE = 0V, f = 1MHz | 75 | pF | ||
| Gate charge | QG | VCC = 960V, IC = 40A, VGE = 15V | - | 180 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | - | 310 | - | A |
| Switching Characteristic, Inductive Load (Tj=25C) | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 40 | - | ns |
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 22 | - | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 180 | - | ns |
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 88 | - | ns |
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 1.9 | - | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 1.1 | - | mJ |
| Switching Characteristic, Inductive Load (Tj=150C) | ||||||
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 40 | - | ns |
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 25 | - | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 195 | - | ns |
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 100 | - | ns |
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 2.2 | - | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12 | - | 1.25 | - | mJ |
| Electrical Characteristics of the DIODE (Tj= 25 unless otherwise specified) | ||||||
| Diode Forward Voltage | VFM | IF = 50A | - | 2.4 | - | V |
| Reverse Recovery Time | Trr | IF= 40A, VR = 300V, di/dt= 600A/s | - | 90 | - | ns |
| Reverse Recovery Current | Irr | IF= 40A, VR = 300V, di/dt= 600A/s | - | 17 | - | A |
| Reverse Recovery Charge | Qrr | IF= 40A, VR = 300V, di/dt= 600A/s | - | 900 | - | nC |
2505231205_SPTECH-IKW50N60H3_C5369329.pdf
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