650V 50A SPTECH SPT50N65F1A Trench Field Stop IGBT designed for performance in welding and solar systems
Key Attributes
Model Number:
SPT50N65F1A
Product Custom Attributes
Pd - Power Dissipation:
260W
Td(off):
180ns
Operating Temperature:
-40℃~+150℃
Td(on):
40ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Input Capacitance(Cies):
2.8nF@30V
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
180nC@15V
Reverse Recovery Time(trr):
90ns
Switching Energy(Eoff):
1.1mJ
Turn-On Energy (Eon):
1.9mJ
Mfr. Part #:
SPT50N65F1A
Package:
TO-247-3
Product Description
Product Overview
The SPT50N65F1A is a 650V, 50A Trench Field Stop IGBT designed for high efficiency and ruggedness. It features low switching losses, high energy efficiency, and excellent avalanche capability, making it ideal for motion control, solar applications, and welding machines. The Trench-Stop Technology ensures high-speed switching, temperature stability, short circuit withstand time, and easy parallel switching.
Product Attributes
- Brand: SPTECH
- Product Code: SPT50N65F1A
- Package: TO247
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250uA | 650 | - | - | V |
| VGE=0V , IC=1mA | 650 | - | - | V | ||
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=250uA | 4.0 | 5.0 | 6.0 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=50A, Tj = 25C | - | - | 1.8 | V |
| VGE=15V, IC=50A, Tj = 150C | - | - | 2.1 | V | ||
| Zero Gate Voltage Collector Current | ICES | VCE = 650V, VGE = 0V, Tj = 25C | - | 0.1 | - | A |
| VCE = 650V, VGE = 0V, Tj = 150C | - | 40 | 1000 | A | ||
| Gate-Emitter Leakage Current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE = 20V, IC = 50A | - | 30 | - | S |
| Input Capacitance | Cies | VCE = 30V, VGE = 0V, f = 1MHz | - | 2800 | - | pF |
| Output Capacitance | Coes | VCE = 30V, VGE = 0V, f = 1MHz | - | 130 | - | pF |
| Reverse Transfer Capacitance | Cres | VCE = 30V, VGE = 0V, f = 1MHz | - | 75 | - | pF |
| Gate Charge | QG | VCC = 960V, IC = 40A, VGE = 15V | - | 180 | - | nC |
| Short Circuit Collector Current | ICSC | VGE=15V,tSC5us, VCC=400V, Tjstart=25C | - | 310 | - | A |
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | - | 40 | - | ns |
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | - | 22 | - | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | - | 180 | - | ns |
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | - | 88 | - | ns |
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | - | 1.9 | - | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=25C | - | 1.1 | - | mJ |
| Turn-on Delay Time | td(on) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C | - | 40 | - | ns |
| Rise Time | tr | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C | - | 25 | - | ns |
| Turn-off Delay Time | td(off) | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C | - | 195 | - | ns |
| Fall Time | tf | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C | - | 100 | - | ns |
| Turn-on Energy | Eon | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C | - | 2.2 | - | mJ |
| Turn-off Energy | Eoff | VCC = 400V, IC = 50.0A, VGE = 0.0/15.0V, Rg=12, Tj=150C | - | 1.25 | - | mJ |
| Diode Forward Voltage | VFM | IF = 50A | - | 2.4 | - | V |
| Reverse Recovery Time | Trr | IF= 40A, VR = 300V, di/dt= 600A/s | - | 90 | - | ns |
| Reverse Recovery Current | Irr | IF= 40A, VR = 300V, di/dt= 600A/s | - | 17 | - | A |
| Reverse Recovery Charge | Qrr | IF= 40A, VR = 300V, di/dt= 600A/s | - | 900 | - | nC |
| IGBT thermal resistance, junction - case | R(j-c) | - | - | - | 0.48 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | - | 1.1 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | - | 40 | K/W |
| Collector-Emitter Breakdown Voltage | VCE | - | 650 | - | - | V |
| DC collector current, limited by Tjmax | IC | TC = 25C | - | 100 | - | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | - | 50 | - | A |
| Diode Forward current, limited by Tjmax | IF | TC = 25C | - | 100 | - | A |
| Diode Forward current, limited by Tjmax | IF | TC = 100C | - | 50 | - | A |
| Turn off safe operating area | - | VCE 650V, Tj 150C | - | 150 | - | A |
| Short Circuit Withstand Time | Tsc | VGE= 15V, VCE 400V | - | 5 | - | s |
| Power dissipation , Tj=25 | Ptot | - | - | - | 260 | W |
| Operating junction temperature | Tj | - | -40 | - | 150 | C |
| Storage temperature | Ts | - | -55 | - | 150 | C |
| Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s | - | - | - | - | 260 | C |
2505231205_SPTECH-SPT50N65F1A_C480187.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
