Low gate charge UNI-SEMIC AP40P100K MOSFET ideal for power management and motor control applications
Key Attributes
Model Number:
AP40P100K
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
34A
RDS(on):
48mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
86pF
Number:
1 P-Channel
Output Capacitance(Coss):
178pF
Input Capacitance(Ciss):
5.805nF
Pd - Power Dissipation:
94W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
AP40P100K
Package:
TO-252
Product Description
Product Overview
The AP40P100K is a high-performance N-channel MOSFET featuring advanced trench technology, low on-resistance, and low gate charge. It is designed for applications requiring efficient power management and control, such as battery management, motor control, and uninterruptible power supplies (UPS).
Product Attributes
- Brand: ZHEJIANG UNIU-NE Technology CO.,LTD
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | (1) | -34 | A | ||
| Continuous Drain Current (Tc=100) | ID | (1) | -21 | A | ||
| Pulsed Drain Current | IDM | (2,3) | -135 | A | ||
| Drain Power Dissipation | PD | (1) | 94 | W | ||
| Single Pulsed Avalanche Energy | EAS | 750 | mJ | |||
| Thermal Resistance from Junction to Case | RJC | 1.33 | /W | |||
| Thermal Resistance from Junction to Ambient | RJA | 129 | /W | |||
| Junction Temperature | TJ | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| MOSFET ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -100 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-100V, VGS = 0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA (4) | -1.5 | -2.0 | -2.5 | V |
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-22A (4) | 31 | 37 | mΩ | |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-10A (4) | 37 | 48 | mΩ | |
| Gate Input Resistance | RG | f=1MHz | 3.8 | Ω | ||
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS =-50V, VGS=0V, f=1MHz (5) | 5805 | pF | ||
| Output Capacitance | Coss | (5) | 178 | pF | ||
| Reverse Transfer Capacitance | Crss | (5) | 86 | pF | ||
| Switching characteristics | ||||||
| Turn-on delay time | td(on) | VDD=-50V, ID=-22A, RG=2.7Ω, VGS=-10V (5) | 15 | nS | ||
| Turn-on rise time | tr | (5) | 44 | |||
| Turn-off delay time | td(off) | (5) | 90 | |||
| Turn-off fall time | tf | (5) | 76 | |||
| Total Gate Charge | Qg | VDS=-50V, ID=-22A, VGS=-10V (5) | 100 | nC | ||
| Gate-Source Charge | Qgs | (5) | 25 | |||
| Gate-Drain Charge | Qg d | (5) | 16 | |||
| Source-Drain Diode characteristics | ||||||
| Diode Forward voltage | VSD | TJ=25, VGS =0V, IS=-22A (4) | -1.3 | V | ||
| Diode Forward current | IS | TC=25 | -34 | A | ||
| Body Diode Reverse Recovery Time | trr | TJ=25, IF=-22A,di/dt=100A/us (4) | 33 | nS | ||
| Body Diode Reverse Recovery Charge | Qrr | (4) | 54 | nC | ||
2509301615_UNI-SEMIC-AP40P100K_C41374778.pdf
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