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quality Trench Field Stop IGBT SPTECH SPT75N65F1 650V 75A with excellent temperature stability and ruggedness factory
quality Trench Field Stop IGBT SPTECH SPT75N65F1 650V 75A with excellent temperature stability and ruggedness factory

Trench Field Stop IGBT SPTECH SPT75N65F1 650V 75A with excellent temperature stability and ruggedness

Key Attributes
Model Number: SPT75N65F1
Product Custom Attributes
Td(off):
660ns
Pd - Power Dissipation:
416W
Td(on):
110ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
100pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.6V@250uA
Gate Charge(Qg):
260nC@15V
Reverse Recovery Time(trr):
75ns
Switching Energy(Eoff):
8.4mJ
Turn-On Energy (Eon):
4.3mJ
Input Capacitance(Cies):
4.5nF
Output Capacitance(Coes):
200pF
Mfr. Part #:
SPT75N65F1
Package:
TO-247-3
Product Description

Product Overview

The SPT75N65F1 is a 650V, 75A Trench Field Stop IGBT designed for high-speed switching applications. It features high ruggedness, temperature stability, and a short circuit withstand time of 5s. Its low VCEsat and easy parallel switching capability make it suitable for demanding power electronics applications.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-Emitter Breakdown VoltageVCEVGE=0V , IC=250uA650--V
VCEVGE=0V , IC=1mA650--V
Gate Threshold VoltageVGE(th)VGE=VCE, IC=250uA4.65.66.2V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC=75A, Tj = 25C--1.7V
VCE(sat)VGE=15V, IC=75A, Tj = 150C--2.2V
Zero Gate Voltage Collector CurrentICESVCE = 650V, VGE = 0V, Tj = 25C-0.1-A
ICESVCE = 650V, VGE = 0V, Tj = 150C-405000A
Gate-emitter Leakage CurrentIGESVCE = 0V, VGE = 20V--100nA
TransconductancegfsVCE = 20V, IC = 75A-40-S
Input CapacitanceCiesVCE = 25V, VGE = 0V, f = 1MHz-4500-pF
Output CapacitanceCoesVCE = 25V, VGE = 0V, f = 1MHz-200-pF
Reverse Transfer CapacitanceCresVCE = 25V, VGE = 0V, f = 1MHz-100-pF
Gate ChargeQGVCC = 480V, IC = 75A, VGE = 15V-260-nC
Short Circuit Collector CurrentICSCVGE=15V,tSC5us, VCC=400V, Tjstart=25C-350-A
Turn-on Delay Timetd(on)VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C-110-ns
Rise TimetrVCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C-40-ns
Turn-off Delay Timetd(off)VCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C-660-ns
Fall TimetfVCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C-60-ns
Turn-on EnergyEonVCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C-4.3-mJ
Turn-off EnergyEoffVCC = 400V, IC =75.0A, VGE = 0.0/15.0V, Rg=30, Tj=25C-8.4-mJ
Diode Forward VoltageVFMIF = 75A, Tj = 25C-2.3-V
Reverse Recovery TimeTrrIF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C-75-ns
Reverse Recovery CurrentIrrIF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C-16-A
Reverse Recovery ChargeQrrIF= 75A, VR = 400V, di/dt= 600A/s, Tj = 25C-664-nC
IGBT thermal resistance, junction - caseR(j-c)---0.3K/W
Diode thermal resistance, junction - caseR(j-c)---0.8K/W
Thermal resistance, junction - ambientR(j-a)---40K/W
Power dissipationPtotTj=25C--416W
Operating junction temperatureTj--40-150C
Storage temperatureTs--55-150C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s----260C

2505231205_SPTECH-SPT75N65F1_C575843.pdf

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