Trench Field Stop IGBT SPTECH SPT15N120T1 1200V 15A Suitable for Motor Drives and Frequency Conversion
Key Attributes
Model Number:
SPT15N120T1
Product Custom Attributes
Pd - Power Dissipation:
208W
Td(off):
330ns
Operating Temperature:
-40℃~+150℃
Td(on):
55ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.2V@250uA
Gate Charge(Qg):
137nC@15V
Reverse Recovery Time(trr):
270ns
Switching Energy(Eoff):
310uJ
Turn-On Energy (Eon):
1.9mJ
Mfr. Part #:
SPT15N120T1
Package:
TO-247-3
Product Description
Product Overview
The SPT15N120T1 is a 1200V / 15A Trench Field Stop IGBT designed for high reliability and performance. It features Trench-Stop Technology for tight parameter distribution, high ruggedness, temperature stable behavior, and a short circuit withstand time of 10s. Its low VCE(SAT) and easy parallel switching capability make it ideal for applications such as frequency converters and motor drives.
Product Attributes
- Brand: SPT (Super Power Semiconductor)
- Model: SPT15N120T1
- Package: TO247
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| IGBT Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V , IC=250A | 1200 | - | - | V |
| Gate threshold voltage | VGE(th) | VGE=VCE, IC=250A | 5.2 | 6.0 | 6.8 | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=15A Tj = 25C | - | 1.7 | - | V |
| Collector-Emitter Saturation voltage | VCE(sat) | VGE=15V, IC=15A Tj = 150C | - | 2.1 | - | V |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V Tj = 25C | - | - | 100 | A |
| Zero gate voltage collector current | ICES | VCE = 1200V, VGE = 0V Tj = 150C | - | - | 1000 | A |
| Gate-emitter leakage current | IGES | VCE = 0V, VGE = 20V | - | - | 100 | nA |
| Transconductance | gfs | VCE=20V, IC=15A | - | 10 | - | S |
| Dynamic Characteristics (IGBT) | ||||||
| Input capacitance | Cies | VCE = 25V, VGE = 0V, f = 1MHz | - | 1870 | - | pF |
| Output capacitance | Coes | - | - | 70 | - | pF |
| Reverse transfer capacitance | Cres | - | - | 45 | - | pF |
| Gate charge | QG | VCC = 960V, IC = 15A, VGE = 15V | - | 137 | - | nC |
| Short circuit collector current | ICSC | VGE=15V,tSC10us VCC=600V, Tjstart=25C | - | 140 | - | A |
| Switching Characteristics (Inductive Load) | ||||||
| Turn-on delay time | td(on) | VCC = 600V, IC = 15A, VGE = 0/15V, Rg=42, Tj = 25C | - | 55 | - | ns |
| Rise time | tr | - | - | 21 | - | ns |
| Turn-on energy | Eon | - | - | 1.9 | - | mJ |
| Turn-off delay time | td(off) | - | - | 330 | - | ns |
| Fall time | tf | - | - | 200 | - | ns |
| Turn-off energy | Eoff | - | - | 0.31 | - | mJ |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VFM | IF = 15A | - | 2.7 | - | V |
| Reverse Recovery Time | Trr | IF= 15A, di/dt= 600A/s | - | 270 | - | ns |
| Reverse Recovery Current | Irr | - | - | 10 | - | A |
| Reverse Recovery Charge | Qrr | - | - | 1800 | - | nC |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | - | - | - | 1200 | V |
| DC collector current, limited by Tjmax | IC | TC = 25C | - | - | 30 | A |
| DC collector current, limited by Tjmax | IC | TC = 100C | - | - | 15 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 25C | - | - | 30 | A |
| Diode Forward current, limited by Tjmax | IF | TC = 100C | - | - | 15 | A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | - | - | - | 60 | A |
| Short Circuit Withstand Time | Tsc | VGE= 15V, VCE 600V | - | - | 10 | s |
| Power dissipation , Tj=25 | Ptot | - | - | - | 208 | W |
| Operating junction temperature | Tj | - | -40 | - | 150 | C |
| Storage temperature | Ts | - | -55 | - | 150 | C |
| Soldering temperature, wave soldering 1.6mm from case for 10s | - | - | - | - | 260 | C |
| Thermal Resistance | ||||||
| IGBT thermal resistance, junction - case | R(j-c) | - | - | - | 0.65 | K/W |
| Diode thermal resistance, junction - case | R(j-c) | - | - | - | 1.5 | K/W |
| Thermal resistance, junction - ambient | R(j-a) | - | - | - | 40 | K/W |
2505231205_SPTECH-SPT15N120T1_C480174.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
