Load Switch Application P Channel MOSFET VBsemi Elec VBI2658 Featuring 60 Volt Drain Source Voltage
Key Attributes
Model Number:
VBI2658
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
58mΩ@10V;65mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 P-Channel
Output Capacitance(Coss):
200pF
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
10.4W
Gate Charge(Qg):
38nC@10V
Mfr. Part #:
VBI2658
Package:
SOT-89
Product Description
Product Overview
This P-Channel 60-V (D-S) MOSFET features Trench Power MOSFET technology and is 100% UIS tested. It is designed for load switch applications.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| P-Channel 60-V (D-S) MOSFET | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TC = 25 C) | ID | -70 | A | |||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | -1.2 | - | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 3 A | 0.048 | Ω | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = - 4.5 V, ID = - 2 A | 0.065 | Ω | ||
| Total Gate Charge | Qg | VDS = - 30 V, VGS = - 10 V, ID = - 5 A | 38 | 56 | nC | |
| Total Gate Charge | Qg | VDS = - 30 V, VGS = - 4.5 V, ID = - 5 A | 19 | 30 | nC | |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | -6.9 | A | ||
| Maximum Power Dissipation | PD | TC = 25 C | 10.4 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | C | ||
| Maximum Junction-to-Ambient Thermal Resistance | RthJA | Steady State | 33 | 40 | C/W | |
| Maximum Junction-to-Case Thermal Resistance | RthJC | Steady State | 0.98 | 1.2 | C/W |
2504180926_VBsemi-Elec-VBI2658_C416322.pdf
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