VBsemi Elec SI4946BEY T1 E3 VB Dual N Channel MOSFET with 60 Volt Drain Source Voltage and RoHS Compliance
Key Attributes
Model Number:
SI4946BEY-T1-E3-VB
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+175℃
RDS(on):
28mΩ@10V;30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
50pF
Number:
2 N-Channel
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
4W
Input Capacitance(Ciss):
600pF
Gate Charge(Qg):
11.7nC@10V
Mfr. Part #:
SI4946BEY-T1-E3-VB
Package:
SO-8
Product Description
Product Overview
The SI4946BEY-T1-E3-VB is a Dual N-Channel Trench Power MOSFET designed for high-performance applications. It offers a 60 V drain-source voltage and a low on-resistance, making it suitable for various power switching and control circuits. Key features include 100% Rg and UIS testing, and operation at elevated temperatures up to 175 C.
Product Attributes
- Brand: VBsemi
- Origin: Taiwan
- Certifications: RoHS compliant
Technical Specifications
| Part Number | Configuration | VDS (V) | RDS(on) () at VGS = 10 V | RDS(on) () at VGS = 4.5 V | ID (A) per leg | Package |
| SI4946BEY-T1-E3-VB | Dual N-Channel | 60 | 0.028 | 0.030 | 7 | O-8 |
2504180925_VBsemi-Elec-SI4946BEY-T1-E3-VB_C5878845.pdf
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