VBsemi Elec AOD2210 VB Power MOSFET N Channel Trench type optimized for PWM and primary side switching
Key Attributes
Model Number:
AOD2210-VB
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
1.8nF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
34nC@10V
Mfr. Part #:
AOD2210-VB
Package:
TO-252
Product Description
Product Overview
The AOD2210-VB is a high-performance N-Channel Trench Power MOSFET designed for primary side switching applications. It features a 175 C junction temperature rating, optimized for PWM applications, and is 100% Rg tested. This MOSFET offers a low on-resistance and is compliant with RoHS Directive 2002/95/EC.
Product Attributes
- Brand: VBsemi
- Certifications: RoHS Directive 2002/95/EC, Halogen-Free (JEDEC JS709A, IEC 61249-2-21)
Technical Specifications
| Parameter | Symbol | Test Conditions | Typ. | Min. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 200 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TJ = 175 °C) | ID | TC = 25 °C | 25 | A | ||
| Continuous Drain Current (TJ = 175 °C) | ID | TC = 125 °C | 16 | A | ||
| Pulsed Drain Current | IDM | 100 | A | |||
| Continuous Source Current (Diode Conduction) | IS | 28 | A | |||
| Avalanche Current | IAS | 3 | A | |||
| Single Pulse Avalanche Energy | EAS | L = 0.1 mH | 18 | mJ | ||
| Maximum Power Dissipation | PD | TC = 25 °C | 96 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | ||
| Thermal Resistance Ratings | ||||||
| Junction-to-Ambient | RthJA | t ≤ 10 s | 15 | 18 | °C/W | |
| Junction-to-Ambient (Steady State) | RthJA | 40 | 50 | °C/W | ||
| Junction-to-Case (Drain) | RthJC | 0.85 | 1.1 | °C/W | ||
| Specifications | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 µA | 200 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 µA | 2 | 4 | V | |
| Gate-Body Leakage | IGSS | VDS = 0 V, VGS = ±20 V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 200 V, VGS = 0 V | 1 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 50 | µA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 250 | µA | ||
| On-State Drain Current | ID(on) | VDS = 5 V, VGS = 10 V | 40 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 3 A | 0.055 | “ | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 3 A, TJ = 25 °C | 0.055 | “ | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 3 A, TJ = 175 °C | 0.070 | “ | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 6 V, ID = 3 A | 0.092 | “ | ||
| Forward Transconductance | gfs | VDS = 15 V, ID = 3 A | 35 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 1800 | pF | ||
| Output Capacitance | Coss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 180 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 80 | pF | ||
| Total Gate Charge | Qg | VDS = 100 V, VGS = 10 V, ID = 3 A | 34 | 5 | nC | |
| Gate-Source Charge | Qgs | VDS = 100 V, VGS = 10 V, ID = 3 A | 8 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 100 V, VGS = 10 V, ID = 3 A | 12 | nC | ||
| Gate Resistance | Rg | 0.5 | 2.9 | “ | ||
| Turn-On Delay Time | td(on) | VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț | 15 | ns | ||
| Rise Time | tr | VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț | 50 | 75 | ns | |
| Turn-Off Delay Time | td(off) | VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț | 4 | 30 | ns | |
| Fall Time | tf | VDD = 100 V, RL = 5.2 ț, ID ≈3 A, VGEN = 10 V, Rg = 2.5 ț | 9 | 60 | ns | |
| Source-Drain Diode Ratings and Characteristics | ||||||
| Pulsed Current | IS | 5 | A | |||
| Diode Forward Voltage | VSD | IF = 3 A, VGS = 0 V | 0.9 | 1.5 | V | |
| Source-Drain Reverse Recovery Time | trr | IF = 3 A, dI/dt = 100 A/µs | 180 | 250 | ns | |
2504171620_VBsemi-Elec-AOD2210-VB_C724967.pdf
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