Durable N channel MOSFET Slkor SL9N150T with Very Low Intrinsic Capacitances and High Speed Switching
Key Attributes
Model Number:
SL9N150T
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.5Ω@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
25pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
350W
Input Capacitance(Ciss):
3.15nF@25V
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
SL9N150T
Package:
TO-247
Product Description
Product Overview
The SL9N150T is a high-performance N-channel MOSFET designed for demanding switching applications. It features 100% avalanche tested, avalanche ruggedness, minimized gate charge, very low intrinsic capacitances, high speed switching, and very low on-resistance. Ideal for use in welders, UPS systems, PV inverters, and general switching applications.
Product Attributes
- Brand: SLKormicro
- Model: SL9N150T
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Electrical Ratings | ||||||
| Drain-source voltage (VGS = 0) | VDS | 1500 | V | |||
| Gate- source voltage | VGS | 30 | ||||
| Drain current (continuous) at TC = 25 C | ID | 9 | A | |||
| Drain current (continuous) at TC = 100 C | ID | 6 | A | |||
| Drain current (pulsed) | IDM | 40 | ||||
| Total dissipation at TC = 25 C | PTOT | 350 | W | |||
| Derating factor | 2.56 | W/ | ||||
| Operating junction temperature | TJ | -55 | 150 | |||
| Storage temperature | Tstg | -55 | 150 | |||
| Thermal Data | ||||||
| Thermal resistance junction-case max | Rthj-case | 0.39 | W/ | |||
| Thermal resistance junction-ambient max | Rthj-amb | 50 | ||||
| Maximum lead temperature for soldering purpose | TJ | 300 | ||||
| Avalanche Characteristics | ||||||
| Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) | IAR | 8 | A | |||
| Single pulse avalanche energy (starting TJ = 25 C, ID = IAR, VDD = 50 V) | EAS | 800 | mJ | |||
| Electrical Characteristics (Tvj = 25C unless otherwise specified) | ||||||
| On /off states | ||||||
| Drain-source breakdown voltage | V(BR)DSS | ID = 1 mA, VGS = 0 | 1500 | V | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS = Max rating | 10 | A | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | VDS=Max rating, TC=125 C | 500 | A | ||
| Gate-body leakage current (VDS = 0) | IGSS | VGS = 30 V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 3 | 4 | 5 | V |
| Static drain-source on resistance | RDS(on) | VGS = 10V, ID = 4A | 2.9 | 3.5 | ||
| Dynamic | ||||||
| Forward transconductance | gfs | VDS = 15 V, ID = 4 | 7 | S | ||
| Input capacitance | Ciss | VDS=25V,f=1MHz,VGS=0 | 3150 | pF | ||
| Output capacitance | Coss | VDS=25V,f=1MHz,VGS=0 | 300 | pF | ||
| Reverse transfer capacitance | Crss | VDS=25V,f=1MHz,VGS=0 | 25 | pF | ||
| Equivalent Output capacitance | Coss eq. | VGS=0,VDS=0 to 1200V | 12 | |||
| Gate input resistance | Rg | f=1MHz Gate DC Bias=0 Test signal level=20mV open drain | 2.2 | |||
| Total gate charge | Qg | VDD=1200V,ID=8A VGS=10V | 85 | nC | ||
| Gate-source charge | Qgs | VDD=1200V,ID=8A VGS=10V | 14 | nC | ||
| Gate-drain charge | Qgd | VDD=1200V,ID=8A VGS=10V | 48 | nC | ||
| Switching times | ||||||
| Turn-on delay time | td(on) | VDD = 750 V, ID = 4 A, RG = 4.7 , VGS = 10 V | 50 | ns | ||
| Rise time | tr | VDD = 750 V, ID = 4 A, RG = 4.7 , VGS = 10 V | 16 | ns | ||
| Turn-off-delay time | td(off) | VDD = 750 V, ID = 4 A, RG = 4.7 , VGS = 10 V | 100 | ns | ||
| Fall time | tf | VDD = 750 V, ID = 4 A, RG = 4.7 , VGS = 10 V | 80 | ns | ||
| Source drain diode | ||||||
| Source-drain current | ISD | 8 | A | |||
| Source-drain current (pulsed) | ISDM | 40 | ||||
| Forward on voltage | VSD | ISD= 8 A, VGS= 0 | 1.5 | V | ||
| Reverse recovery time | trr | ISD= 8A, di/dt=100A/s VDD= 60 V | 950 | ns | ||
| Reverse recovery charge | Qrr | ISD= 8A, di/dt=100A/s VDD= 60 V | 9 | C | ||
| Reverse recovery current | IRRM | ISD= 8A, di/dt=100A/s VDD= 60 V | 20 | A | ||
| Reverse recovery time | trr | SD=8A, di/dt=100A/s VDD= 60V TJ=150C | 900 | ns | ||
| Reverse recovery charge | Qrr | SD=8A, di/dt=100A/s VDD= 60V TJ=150C | 8.5 | C | ||
| Reverse recovery current | IRRM | SD=8A, di/dt=100A/s VDD= 60V TJ=150C | 19 | A | ||
2409302200_Slkor-SL9N150T_C5375313.pdf
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