Power MOSFET VBsemi Elec VBQA1102N N Channel 100 Volt Drain Source Breakdown Voltage for DC DC Conversion
Key Attributes
Model Number:
VBQA1102N
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11.2pF
Number:
1 N-channel
Output Capacitance(Coss):
132pF
Input Capacitance(Ciss):
1.47nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
VBQA1102N
Package:
DFN5x6-8
Product Description
Product Overview
The VBQA1102N is an N-Channel 100-V (D-S) Trench Power MOSFET designed for high-performance applications. It features a low thermal resistance package, a high junction temperature rating of 175 C, and is 100% Rg tested. This MOSFET is ideal for isolated DC/DC converters and other power management solutions requiring robust and efficient switching.
Product Attributes
- Brand: VBsemi
- Product Type: N-Channel MOSFET
- Compliance: RoHS Compliant
- Package Type: DFN5X6
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Static Characteristics | ||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 A | 100 | - | - | V |
| VDS temperature coefficient | ID = 10 mA | - | 81 | - | mV/C | |
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 3 | - | 5 | V |
| VGS(th) temperature coefficient | ID = 250 A | - | -7.5 | - | mV/C | |
| Gate-source leakage | IGSS | VDS = 0 V, VGS = 20 V | - | - | 100 | nA |
| Zero gate voltage drain current | IDSS | VDS = 100 V, VGS = 0 V | - | - | 1 | A |
| VDS = 100 V, VGS = 0 V, TJ = 70 C | - | - | 15 | |||
| On-state drain current | ID(on) | VDS 10 V, VGS = 10 V | 40 | - | - | A |
| Drain-source on-state resistance | RDS(on) | VGS = 10 V, ID = 10 A | - | 0.0170 | - | |
| VGS = 7.5 V, ID = 10 A | - | 0.0200 | - | |||
| Forward transconductance | gfs | VDS = 15 V, ID = 10 A | - | 46 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS = 50 V, VGS = 0 V, f = 1 MHz | - | 1470 | - | pF |
| Output capacitance | Coss | - | 132 | - | ||
| Reverse transfer capacitance | Crss | - | 11.2 | - | ||
| Total gate charge | Qg | VDS = 50 V, VGS = 10 V, ID = 10 A | - | 20 | - | nC |
| VDS = 50 V, VGS = 7.5 V, ID = 10 A | - | 15 | - | |||
| Gate-source charge | Qgs | - | 6.45 | - | ||
| Gate-drain charge | Qg d | - | 3.5 | - | ||
| Output charge | Qoss | VDS = 50 V, VGS = 0 V | - | 22 | - | |
| Gate resistance | Rg | f = 1 MHz | 0.2 | 0.76 | 1.4 | |
| Switching Characteristics (VDD = 50 V, RL = 5 , ID 10 A, VGEN = 10 V, Rg = 1 ) | ||||||
| Turn-on delay time | td(on) | - | 12 | 24 | ns | |
| Rise time | tr | - | 5 | 10 | ||
| Turn-off delay time | td(off) | - | 19 | 38 | ||
| Fall time | tf | - | 5 | 10 | ||
| Switching Characteristics (VDD = 50 V, RL = 5 , ID 10 A, VGEN = 7.5 V, Rg = 1 ) | ||||||
| Turn-on delay time | td(on) | - | 15 | 30 | ns | |
| Rise time | tr | - | 6 | 12 | ||
| Turn-off delay time | td(off) | - | 19 | 38 | ||
| Fall time | tf | - | 5 | 10 | ||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous source-drain diode current | IS | TC = 25 C | - | - | 56.8 | A |
| Pulse diode forward current | ISM | - | - | 80 | ||
| Body diode voltage | VSD | IS = 5 A, VGS = 0 V | - | 0.78 | 1.1 | V |
| Body diode reverse recovery time | trr | IF = 10 A, di/dt = 100 A/s, TJ = 25 C | - | 43 | 86 | ns |
| Body diode reverse recovery charge | Qrr | - | 72 | 144 | nC | |
| Reverse recovery fall time | ta | - | 33 | - | ns | |
| Reverse recovery rise time | tb | - | 10 | - | ||
2504180926_VBsemi-Elec-VBQA1102N_C481046.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
