Low voltage high current medium power PNP transistor Suzhou Good-Ark Elec GSBCX53 for general purpose
Key Attributes
Model Number:
GSBCX53
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Transition Frequency(fT):
50MHz
Type:
NPN
Vce Saturation(VCE(sat)):
500mV@0.5A,50mA
Pd - Power Dissipation:
500mW
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
GSBCX53
Package:
SOT-89-3L
Product Description
Product Overview
The GSBCX51, GSBCX52, and GSBCX53 are PNP transistors designed for low voltage and high current applications. They serve as medium power general-purpose devices and are suitable for driver stages in audio amplifiers. These transistors are NPN complements to the GSBCX54, GSBCX55, and GSBCX56 series.
Product Attributes
- Brand: goodarksemi
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | GSBCX51 | GSBCX52 | GSBCX53 | Unit | Test Conditions |
| Collector-Emitter Voltage | VCEO | -45 | -60 | -100 | V | IC=-10mA, IB=0 |
| Collector-Base Voltage | VCBO | -45 | -60 | -80 | V | IE=0 |
| Emitter-Base Voltage | VEBO | -5 | V | IC=0 | ||
| Collector Current | IC | -1 | A | |||
| Collector Power Dissipation | PC | 500 | mW | TA=25C unless otherwise noted | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 to +150 | ||||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE=-100A, IC=0 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -45 | -60 | -100 | V | IC=-100A, IE=0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | -60 | -80 | V | IC=-10mA, IB=0 |
| Collector Cut-Off Current | ICBO | -0.1 | A | VCB=-30V, IE=0 | ||
| Emitter Cut-Off Current | IEBO | -0.1 | A | VEB=-5V, IC=0 | ||
| DC Current Gain (hFE) | hFE(1) | 63 | VCE=-5V, IC=-10mA, f=100MHz | |||
| DC Current Gain (hFE) | hFE(2) | 63-250 | 63-160 | 100-250 | VCE=-2V, IC=-0.5A | |
| DC Current Gain (hFE) | hFE(3) | 40 | IC=-0.5A, IB=-50mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.5 | V | VCE=-2V, IC=-0.5A | ||
| Base-Emitter Voltage | VBE | -1 | V | VCE=-2V, IC=-0.5A | ||
| Transition Frequency | fT | 50 | MHz | VCE=-2V, IC=-150mA | ||
| Thermal Resistance From Junction To Ambient | RJA | 250 | /W |
2411201843_Suzhou-Good-Ark-Elec-GSBCX53_C19841096.pdf
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